Photocurrent density enhancement of a III-V inverse quantum dot intermediate band gap photovoltaic device

Jeong Dong Kim, Xiaogang Chen, Xiuling Li, J. J. Coleman

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

We measured the photocurrent density of quantum well (QW) and inverse quantum dot (IQD) photovoltaic devices. The photocurrent per unit area of IQD was enhanced as the carrier confinement became stronger with increasing diameter.

Original languageEnglish (US)
Title of host publication2015 Conference on Lasers and Electro-Optics, CLEO 2015
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781557529688
StatePublished - Aug 10 2015
EventConference on Lasers and Electro-Optics, CLEO 2015 - San Jose, United States
Duration: May 10 2015May 15 2015

Publication series

NameConference on Lasers and Electro-Optics Europe - Technical Digest
Volume2015-August

Other

OtherConference on Lasers and Electro-Optics, CLEO 2015
Country/TerritoryUnited States
CitySan Jose
Period5/10/155/15/15

Keywords

  • Arrays
  • Gallium arsenide
  • Nonhomogeneous media
  • Photoconductivity
  • Photovoltaic systems
  • Quantum computing

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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