Photochemical growth of GaN and AlN on sapphire (0001) and GaAs(100)

Keyphrases

• Gallium Arsenide 100%
• Sapphire 100%
• Growth Rate 100%
• Xenon Lamp 100%
• Diffraction 50%
• Film Growth 50%
• X-ray 50%
• Basal Plane 50%
• Laser Beams 50%
• Argon 50%
• UV Radiation 50%
• Gallium Nitride 50%
• Optical Source 50%
• Wurtzite Structure 50%
• Vapor Deposition 50%
• GaN Growth 50%
• Excimer Laser 50%
• Gas Stream 50%
• Aluminum Nitride Film 50%
• ArF Laser 50%
• Parallel Geometry 50%

Material Science

• Film 100%
• Gallium Arsenide 100%
• Aluminum Nitride 100%
• Sapphire 100%
• Xenon 100%
• Lamp 100%
• X-Ray Diffraction 50%
• Gallium Nitride 50%
• Film Growth 50%
• Feedstock 50%