Photo-thermoelectric effect at a graphene interface junction

Xiaodong Xu, Nathaniel M. Gabor, Jonathan S. Alden, Arend M. Van Der Zande, Paul L. McEuen

Research output: Contribution to journalArticle

Abstract

We investigate the optoelectronic response of a graphene single-bilayer interface junction using photocurrent (PC) microscopy. We measure the polarity and amplitude of the PC while varying the Fermi level by tuning a gate voltage. These measurements show that the generation of PC is by a photothermoelectric effect. The PC displays a factor of ∼10 increase at the cryogenic temperature as compared to room temperature. Assuming the thermoelectric power has a linear dependence on the temperature, the inferred graphene thermal conductivity from temperature dependent measurements has a T1.5 dependence below ∼100 K, which agrees with recent theoretical predictions.

Original languageEnglish (US)
Pages (from-to)562-566
Number of pages5
JournalNano letters
Volume10
Issue number2
DOIs
StatePublished - Feb 10 2010
Externally publishedYes

Fingerprint

Thermoelectricity
Graphite
Photocurrents
Graphene
photocurrents
graphene
Temperature
Thermoelectric power
cryogenic temperature
Fermi level
Optoelectronic devices
Cryogenics
Thermal conductivity
polarity
Microscopic examination
thermal conductivity
Tuning
tuning
microscopy
temperature

Keywords

  • Graphene
  • Photo-thermoelectric effect
  • Photocurrent

ASJC Scopus subject areas

  • Bioengineering
  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanical Engineering

Cite this

Photo-thermoelectric effect at a graphene interface junction. / Xu, Xiaodong; Gabor, Nathaniel M.; Alden, Jonathan S.; Van Der Zande, Arend M.; McEuen, Paul L.

In: Nano letters, Vol. 10, No. 2, 10.02.2010, p. 562-566.

Research output: Contribution to journalArticle

Xu, Xiaodong ; Gabor, Nathaniel M. ; Alden, Jonathan S. ; Van Der Zande, Arend M. ; McEuen, Paul L. / Photo-thermoelectric effect at a graphene interface junction. In: Nano letters. 2010 ; Vol. 10, No. 2. pp. 562-566.
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