Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

E. E. Reuter; S. Q. Gu; Q. Xu; W. Wohlmuth; I. Adesida; S. G. Bishop

doi:10.1109/68.313066

Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

E. E. Reuter, S. Q. Gu, Q. Xu, W. Wohlmuth, I. Adesida, S. G. Bishop

Research output: Contribution to journal › Article › peer-review

Abstract

The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.

Original language	English (US)
Pages (from-to)	966-970
Number of pages	5
Journal	IEEE Photonics Technology Letters
Volume	6
Issue number	8
DOIs	https://doi.org/10.1109/68.313066
State	Published - Aug 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

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10.1109/68.313066

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@article{39e67311c65d44acb59dd0e9e2312649,

title = "Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy",

abstract = "The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.",

author = "Reuter, {E. E.} and Gu, {S. Q.} and Q. Xu and W. Wohlmuth and I. Adesida and Bishop, {S. G.}",

note = "Funding Information: Manuscript received January 31, 1994; revised April 20, 1994. This work has been supported by the National Science Foundation under the Engineering Research Centers Program (ECD-89-43 166).",

year = "1994",

month = aug,

doi = "10.1109/68.313066",

language = "English (US)",

volume = "6",

pages = "966--970",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "8",

}

TY - JOUR

T1 - Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

AU - Reuter, E. E.

AU - Gu, S. Q.

AU - Xu, Q.

AU - Wohlmuth, W.

AU - Adesida, I.

AU - Bishop, S. G.

N1 - Funding Information: Manuscript received January 31, 1994; revised April 20, 1994. This work has been supported by the National Science Foundation under the Engineering Research Centers Program (ECD-89-43 166).

PY - 1994/8

Y1 - 1994/8

N2 - The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.

AB - The effects of size and transparency of fingers on the spatial distribution of radiative recombination of photo-injected carriers in metal-semiconductor-metal photodiodes have been investigated using photoluminescence microscopy. Investigations of detectors having fingers and spaces of 20 μm showed a depletion region width which varies with bias voltage in a quasi-one-dimensional Schottky diode functional form. Regions of non-uniform electric field were observed in the corners of titanium-gold electrode devices and underneath indium-tin-oxide electrodes. Photodiodes with 3 μm wide fingers were found to have a depletion region which did not behave in a quasi-one-dimensional manner.

UR - http://www.scopus.com/inward/record.url?scp=0028479929&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028479929&partnerID=8YFLogxK

U2 - 10.1109/68.313066

DO - 10.1109/68.313066

M3 - Article

AN - SCOPUS:0028479929

SN - 1041-1135

VL - 6

SP - 966

EP - 970

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 8

ER -

Photo-Injected Carrier Distributions in Metal-Semiconductor-Metal Photodetectors Imaged by Photoluminescence Microscopy

Abstract

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