Phonon limited transport in graphene pseudospintronic devices

Z. J. Estrada; B. Dellabetta; U. Ravaioli; M. J. Gilbert

doi:10.1109/DRC.2012.6256952

Phonon limited transport in graphene pseudospintronic devices

Z. J. Estrada, B. Dellabetta, U. Ravaioli, M. J. Gilbert

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

Graphene pseudospin (G-PsS) devices have the potential to far outperform traditional CMOS devices. This is due to a predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate in double layer graphene [1]. The condensate is formed when electrons and holes in residing in opposite graphene layers bind into excitons as a result of strong interlayer Coulomb interactions. This device is expected to exhibit interlayer superfluidity, which allows for large interlayer currents at correspondingly low interlayer bias voltages. As G-PsS device are expected to operate at room temperature, it is important to understand how the electron-phonon interaction (EPI) affects device performance.

Original language	English (US)
Title of host publication	70th Device Research Conference, DRC 2012 - Conference Digest
Pages	87-88
Number of pages	2
DOIs	https://doi.org/10.1109/DRC.2012.6256952
State	Published - 2012
Event	70th Device Research Conference, DRC 2012 - University Park, PA, United States Duration: Jun 18 2012 → Jun 20 2012

Publication series

Name	Device Research Conference - Conference Digest, DRC
ISSN (Print)	1548-3770

Other

Other	70th Device Research Conference, DRC 2012
Country/Territory	United States
City	University Park, PA
Period	6/18/12 → 6/20/12

ASJC Scopus subject areas

Electrical and Electronic Engineering

Online availability

10.1109/DRC.2012.6256952

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Estrada, ZJ, Dellabetta, B, Ravaioli, U & Gilbert, MJ 2012, Phonon limited transport in graphene pseudospintronic devices. in 70th Device Research Conference, DRC 2012 - Conference Digest., 6256952, Device Research Conference - Conference Digest, DRC, pp. 87-88, 70th Device Research Conference, DRC 2012, University Park, PA, United States, 6/18/12. https://doi.org/10.1109/DRC.2012.6256952

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abstract = "Graphene pseudospin (G-PsS) devices have the potential to far outperform traditional CMOS devices. This is due to a predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate in double layer graphene [1]. The condensate is formed when electrons and holes in residing in opposite graphene layers bind into excitons as a result of strong interlayer Coulomb interactions. This device is expected to exhibit interlayer superfluidity, which allows for large interlayer currents at correspondingly low interlayer bias voltages. As G-PsS device are expected to operate at room temperature, it is important to understand how the electron-phonon interaction (EPI) affects device performance.",

author = "Estrada, {Z. J.} and B. Dellabetta and U. Ravaioli and Gilbert, {M. J.}",

year = "2012",

doi = "10.1109/DRC.2012.6256952",

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N2 - Graphene pseudospin (G-PsS) devices have the potential to far outperform traditional CMOS devices. This is due to a predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate in double layer graphene [1]. The condensate is formed when electrons and holes in residing in opposite graphene layers bind into excitons as a result of strong interlayer Coulomb interactions. This device is expected to exhibit interlayer superfluidity, which allows for large interlayer currents at correspondingly low interlayer bias voltages. As G-PsS device are expected to operate at room temperature, it is important to understand how the electron-phonon interaction (EPI) affects device performance.

AB - Graphene pseudospin (G-PsS) devices have the potential to far outperform traditional CMOS devices. This is due to a predicted room temperature phase transition from Fermi liquid to Bose-Einstein condensate in double layer graphene [1]. The condensate is formed when electrons and holes in residing in opposite graphene layers bind into excitons as a result of strong interlayer Coulomb interactions. This device is expected to exhibit interlayer superfluidity, which allows for large interlayer currents at correspondingly low interlayer bias voltages. As G-PsS device are expected to operate at room temperature, it is important to understand how the electron-phonon interaction (EPI) affects device performance.

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Phonon limited transport in graphene pseudospintronic devices

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