Phonon-limited transport in graphene pseudospintronic devices

Z. J. Estrada, B. Dellabetta, U. Ravaioli, M. J. Gilbert

Research output: Contribution to journalArticlepeer-review


A predicted room-temperature phase transition from Fermi liquid to dissipationless Bose-Einstein exciton superfluid suggests that graphene pseudospin devices may have the potential to far outperform traditional CMOS devices. When examining the possibility of a room-temperature exciton condensate, it is important to consider scattering of charge carriers by phonons in each of the constituent graphene monolayers. Using the nonequilibrium Green's function formalism, we examine the effect that carrier-phonon scattering has on device performance. We find that the effect of carrier-phonon scattering has strong dependence on the device coherence length. As such, for large gate voltages, the effect of phonons on interlayer transport is negligible.

Original languageEnglish (US)
Article number6261522
Pages (from-to)1465-1467
Number of pages3
JournalIEEE Electron Device Letters
Issue number10
StatePublished - 2012


  • Critical current
  • nanoelectronics
  • phonons
  • tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering


Dive into the research topics of 'Phonon-limited transport in graphene pseudospintronic devices'. Together they form a unique fingerprint.

Cite this