TY - JOUR
T1 - Phonon ionization of neutral donors in lightly doped GaAs
T2 - A model for the conductance oscillations in semiconductor-insulator-semiconductor tunnel structures
AU - Leburton, J. P.
N1 - Copyright:
Copyright 2015 Elsevier B.V., All rights reserved.
PY - 1988
Y1 - 1988
N2 - A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.
AB - A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.
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U2 - 10.1103/PhysRevB.38.4085
DO - 10.1103/PhysRevB.38.4085
M3 - Article
AN - SCOPUS:35949013582
SN - 0163-1829
VL - 38
SP - 4085
EP - 4095
JO - Physical Review B
JF - Physical Review B
IS - 6
ER -