Phonon ionization of neutral donors in lightly doped GaAs: A model for the conductance oscillations in semiconductor-insulator-semiconductor tunnel structures

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Abstract

A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.

Original languageEnglish (US)
Pages (from-to)4085-4095
Number of pages11
JournalPhysical Review B
Volume38
Issue number6
DOIs
StatePublished - Jan 1 1988

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SIS (semiconductors)
tunnels
ionization
oscillations
space charge
impurities
magnetic fields

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

@article{41306556a343478b9c7f0aab0a3af558,
title = "Phonon ionization of neutral donors in lightly doped GaAs: A model for the conductance oscillations in semiconductor-insulator-semiconductor tunnel structures",
abstract = "A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.",
author = "Jean-Pierre Leburton",
year = "1988",
month = "1",
day = "1",
doi = "10.1103/PhysRevB.38.4085",
language = "English (US)",
volume = "38",
pages = "4085--4095",
journal = "Physical Review B",
issn = "0163-1829",
number = "6",

}

TY - JOUR

T1 - Phonon ionization of neutral donors in lightly doped GaAs

T2 - A model for the conductance oscillations in semiconductor-insulator-semiconductor tunnel structures

AU - Leburton, Jean-Pierre

PY - 1988/1/1

Y1 - 1988/1/1

N2 - A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.

AB - A model of space-charge generation by phonon ionization of neutral donors in the n-type GaAs layer of the Hickmott tunnel device is presented. Various features associated with the periodic structures in the junction conductance, such as peak narrowing in magnetic fields attributed to magnetoimpurity resonance, are explained in terms of one-dimensional LO-phonon emission and ionization rate. The high-temperature data in the experiment of Lu, Tsui, and Cox on In-InP contacts is interpreted in terms of carrier capture by ionized impurities with LO-phonon emission, which is the inverse mechanism of LO-phonon ionization. Theoretical results compare well with the experiment.

UR - http://www.scopus.com/inward/record.url?scp=35949013582&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=35949013582&partnerID=8YFLogxK

U2 - 10.1103/PhysRevB.38.4085

DO - 10.1103/PhysRevB.38.4085

M3 - Article

AN - SCOPUS:35949013582

VL - 38

SP - 4085

EP - 4095

JO - Physical Review B

JF - Physical Review B

SN - 0163-1829

IS - 6

ER -