Phonon-assisted transmission in resonant interband tunneling devices

Yu B. Lyanda-Geller; J. P. Leburton

doi:10.1063/1.114514

Phonon-assisted transmission in resonant interband tunneling devices

Yu B. Lyanda-Geller, J. P. Leburton

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

We demonstrate that phonon-assisted transmission may play a considerably lower role in interband tunneling structures than in intraband tunneling based devices as a result of the symmetry difference between electron and hole states. An example of current-voltage characteristics is calculated for resonant interband tunneling structure with confined electron and hole states.

Original language	English (US)
Pages (from-to)	1423
Number of pages	1
Journal	Applied Physics Letters
Volume	67
DOIs	https://doi.org/10.1063/1.114514
State	Published - 1995

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Physics and Astronomy (miscellaneous)

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10.1063/1.114514

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@article{8c87ae96b9e34d078fc05546067601f2,

title = "Phonon-assisted transmission in resonant interband tunneling devices",

abstract = "We demonstrate that phonon-assisted transmission may play a considerably lower role in interband tunneling structures than in intraband tunneling based devices as a result of the symmetry difference between electron and hole states. An example of current-voltage characteristics is calculated for resonant interband tunneling structure with confined electron and hole states.",

author = "Lyanda-Geller, {Yu B.} and Leburton, {J. P.}",

year = "1995",

doi = "10.1063/1.114514",

language = "English (US)",

volume = "67",

pages = "1423",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

}

TY - JOUR

T1 - Phonon-assisted transmission in resonant interband tunneling devices

AU - Lyanda-Geller, Yu B.

AU - Leburton, J. P.

PY - 1995

Y1 - 1995

N2 - We demonstrate that phonon-assisted transmission may play a considerably lower role in interband tunneling structures than in intraband tunneling based devices as a result of the symmetry difference between electron and hole states. An example of current-voltage characteristics is calculated for resonant interband tunneling structure with confined electron and hole states.

AB - We demonstrate that phonon-assisted transmission may play a considerably lower role in interband tunneling structures than in intraband tunneling based devices as a result of the symmetry difference between electron and hole states. An example of current-voltage characteristics is calculated for resonant interband tunneling structure with confined electron and hole states.

UR - http://www.scopus.com/inward/record.url?scp=0006186161&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0006186161&partnerID=8YFLogxK

U2 - 10.1063/1.114514

DO - 10.1063/1.114514

M3 - Article

AN - SCOPUS:0006186161

SN - 0003-6951

VL - 67

SP - 1423

JO - Applied Physics Letters

JF - Applied Physics Letters

ER -

Phonon-assisted transmission in resonant interband tunneling devices

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