Phonon-assisted reduction of hot spot temperature in AlInN ternaries

Ahmed Mohamed, Kihoon Park, Can Bayram, Mitra Dutta, Michael A. Stroscio

Research output: Contribution to journalArticle

Abstract

A longstanding challenge is the reduction of temperature in hot spots occurring in AlN-based ternary device structures. In this paper, we develop a uniaxial dielectric model and present theoretical analysis of the Frohlich interaction between electrons and interface and confined optical phonons, and their properties. This model is used to introduce new ways of achieving temperature reduction in hot spots in regions of elevated temperature in AlN- and InN-based electronic and optoelectronic devices.

Original languageEnglish (US)
Article number365102
JournalJournal of Physics D: Applied Physics
Volume53
Issue number36
DOIs
StatePublished - Sep 2 2020

Keywords

  • AlInN
  • Hot spot temperature
  • Phonons
  • Ternary alloys

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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