Abstract
This paper describes the phase shift and loss mechanism of the optically excited E-plane electron-hole plasma. For GaAs as the inserted semiconductor, it is shown that an optically sensitive regime occurs, where the phase shift is highly influenced by the illumination and the peak of the optically induced loss exists. The regime is changed by the distribution profile of the excess carriers. It is observed that at the high injection light power level, the optically excited plasma behaves as the metallic strip does. The field distributions of the optically excited plasma section are also demonstrated, which support the field-displacement effects of the plasma.
| Original language | English (US) |
|---|---|
| Title of host publication | Proceedings of SPIE - The International Society for Optical Engineering |
| Editors | James R. Birch, Terence J. Parker |
| Publisher | Publ by Society of Photo-Optical Instrumentation Engineers |
| Pages | 543-544 |
| Number of pages | 2 |
| Volume | 2104 |
| ISBN (Print) | 0819413925 |
| State | Published - 1993 |
| Externally published | Yes |
| Event | Proceedings of the 18th International Conference on Infrared and Millimeter Waves - Colchester, Engl Duration: Sep 6 1993 → Sep 10 1993 |
Other
| Other | Proceedings of the 18th International Conference on Infrared and Millimeter Waves |
|---|---|
| City | Colchester, Engl |
| Period | 9/6/93 → 9/10/93 |
ASJC Scopus subject areas
- Electrical and Electronic Engineering
- Condensed Matter Physics