TY - GEN
T1 - Phase identification of intermetallic compounds formed during in-48Sn/Cu soldering reactions
AU - Shang, P. J.
AU - Liu, Z. Q.
AU - Li, D. X.
AU - Shang, J. K.
PY - 2009
Y1 - 2009
N2 - Transmission electron microscope observations and precise diffraction analyses were performed on the interfacial reaction between In-48Sn and Cu at the temperature range from 160°C to 250°C for up to 90 minutes. The results indicated that two different morphologies formed between In-48Sn and Cu at the temperature below 200°C: small-grain Cu2(In,Sn) at the Cu side and large-grain Cu2(In,Sn) at the solder side. If the soldering temperature is above 200°C, the Cu6(In,Sn)5 phase is the first phase formed at the solder/Cu interface. However, the subsequent solid-state diffusion of In and Sn atoms through the initial Cu 6(In,Sn)5 layer drove the formation of Cu 9(In,Sn)4 phase between Cu6(In,Sn)5 and Cu substrate.
AB - Transmission electron microscope observations and precise diffraction analyses were performed on the interfacial reaction between In-48Sn and Cu at the temperature range from 160°C to 250°C for up to 90 minutes. The results indicated that two different morphologies formed between In-48Sn and Cu at the temperature below 200°C: small-grain Cu2(In,Sn) at the Cu side and large-grain Cu2(In,Sn) at the solder side. If the soldering temperature is above 200°C, the Cu6(In,Sn)5 phase is the first phase formed at the solder/Cu interface. However, the subsequent solid-state diffusion of In and Sn atoms through the initial Cu 6(In,Sn)5 layer drove the formation of Cu 9(In,Sn)4 phase between Cu6(In,Sn)5 and Cu substrate.
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U2 - 10.1109/ICEPT.2009.5270680
DO - 10.1109/ICEPT.2009.5270680
M3 - Conference contribution
AN - SCOPUS:70449916265
SN - 9781424446599
T3 - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
SP - 597
EP - 600
BT - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
T2 - 2009 International Conference on Electronic Packaging Technology and High Density Packaging, ICEPT-HDP 2009
Y2 - 10 August 2009 through 13 August 2009
ER -