Abstract
We use low-energy electron microscopy to study the microstructure of the '16 × 2' to (1 × 1) phase transition of Si(1 1 0). At temperatures within several degrees of Tc = 734 °C, two domains of the low temperature 16 × 2 phase coexist with the high temperature (1 × 1) phase. We demonstrate this phase coexistence through the reversibility of the areal fractions of each phase under small, ΔT ≈ 2 °C, temperature excursions near Tc. The phase-fractions respond quickly, on the order of 10 min, to these temperature excursions. The size of the 16 × 2 domains is controlled by the extent of relatively large terraces that form by the bunching of several atomic-height steps. Substrates with morphologies modified by laser texturing show how the nucleation of the low temperature domains varies with surface orientation near (1 1 0).
Original language | English (US) |
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Pages (from-to) | L599-L603 |
Journal | Surface Science |
Volume | 519 |
Issue number | 1-2 |
DOIs | |
State | Published - Nov 1 2002 |
Keywords
- Low-energy electron microscopy (LEEM)
- Silicon
- Surface structure, morphology, roughness, and topography
- Surface thermodynamics (including phase transitions)
ASJC Scopus subject areas
- Physical and Theoretical Chemistry
- Condensed Matter Physics
- Surfaces and Interfaces