Perturbation of au-assisted planar GaAs nanowire growth by p-type dopant impurities

Ryan S. Dowdy, Chen Zhang, Parsian K. Mohseni, Seth A. Fortuna, Jian Guo Wen, James J. Coleman, Xiuling Li

Research output: Contribution to journalArticle

Abstract

III-V compound semiconductor nanowires (NWMs), with their direct bandgaps and high mobilities, have been shown to be promising materials for many applications including solar cells, light emitting diodes, transistors, and lasers. Self-aligned, twin-plane-defect free, planar GaAs NWs can be grown by metalorganic chemical vapor deposition (MOCVD) through the Au-assisted vapor-liquid-solid mechanism. In this report, <110> planar GaAs NW growth on GaAs (100) substrates is perturbed by introducing common p-type dopant impurities, zinc (Zn) or carbon (C), and characterized structurally and electrically. The implications of the results on planar NW growth and doping mechanism are discussed.

Original languageEnglish (US)
Pages (from-to)1687-1697
Number of pages11
JournalOptical Materials Express
Volume3
Issue number10
DOIs
StatePublished - Nov 26 2013

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials

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    Dowdy, R. S., Zhang, C., Mohseni, P. K., Fortuna, S. A., Wen, J. G., Coleman, J. J., & Li, X. (2013). Perturbation of au-assisted planar GaAs nanowire growth by p-type dopant impurities. Optical Materials Express, 3(10), 1687-1697. https://doi.org/10.1364/OME.3.001687