Performance of a large-area avalanche photodiode at low temperature for scintillation detection

L. Yang, S. N. Dzhosyuk, J. M. Gabrielse, P. R. Huffman, C. E.H. Mattoni, S. E. Maxwell, D. N. McKinsey, J. M. Doyle

Research output: Contribution to journalArticlepeer-review

Abstract

We investigate the performance of a large-area (13 mm × 13 mm) avalanche photodiode at temperatures ranging from 4.2 to 77 K. We find that the gain, at a given bias voltage, increases with decreasing temperature down to 40 K, below which a premature breakdown phenomenon occurs. The quantum efficiency of the device decreases with decreasing temperature until approximately 40 K, at which point it drops abruptly to <15% of its room temperature value. The sensitivity of the device above 40 K makes it a good candidate for detection of scintillation light in low-temperature systems.

Original languageEnglish (US)
Pages (from-to)388-393
Number of pages6
JournalNuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment
Volume508
Issue number3
DOIs
StatePublished - Aug 11 2003

Keywords

  • Avalanche photodiode
  • Carrier freeze-out
  • Low temperature
  • Quantum efficiency
  • Scintillation detection

ASJC Scopus subject areas

  • Nuclear and High Energy Physics
  • Instrumentation

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