Abstract
We investigate the performance of a large-area (13 mm × 13 mm) avalanche photodiode at temperatures ranging from 4.2 to 77 K. We find that the gain, at a given bias voltage, increases with decreasing temperature down to 40 K, below which a premature breakdown phenomenon occurs. The quantum efficiency of the device decreases with decreasing temperature until approximately 40 K, at which point it drops abruptly to <15% of its room temperature value. The sensitivity of the device above 40 K makes it a good candidate for detection of scintillation light in low-temperature systems.
Original language | English (US) |
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Pages (from-to) | 388-393 |
Number of pages | 6 |
Journal | Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment |
Volume | 508 |
Issue number | 3 |
DOIs | |
State | Published - Aug 11 2003 |
Keywords
- Avalanche photodiode
- Carrier freeze-out
- Low temperature
- Quantum efficiency
- Scintillation detection
ASJC Scopus subject areas
- Nuclear and High Energy Physics
- Instrumentation