High quality δ -doped p-GaN is used as a means of improving the performance of back-illuminated GaN avalanche photodiodes (APDs). Devices with δ -doped p-GaN show consistently lower leakage current and lower breakdown voltage than those with bulk p-GaN. APDs with δ -doped p-GaN also achieve a maximum multiplication gain of 5.1× 104, more than 50 times higher than that obtained in devices with bulk p-GaN. The better device performance of APDs with δ -doped p-GaN is attributed to the higher structural quality of the p-GaN layer achieved via δ -doping.
|Original language||English (US)|
|Journal||Applied Physics Letters|
|State||Published - 2008|
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)