Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with f T>500 GHz

William Snodgrass; Bing Ruey Wu; Walid Hafez; K. Y. Cheng; Milton Feng

doi:10.1063/1.2207843

Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with f _T>500 GHz

William Snodgrass
, Bing Ruey Wu
, Walid Hafez
, K. Y. Cheng
, Milton Feng

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The high frequency performance of type-II InPGaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15 mAμ m2. The peak fT of a graded base device with 0.38×8 μ m2 emitter dimensions improves from 505 GHz at 25 °C to 535 GHz at -55 °C as determined by -20 dBdecade extrapolation. The base grading has reduced the total transit time by 25% compared to the uniform base type-II DHBT.

Original language	English (US)
Article number	222101
Journal	Applied Physics Letters
Volume	88
Issue number	22
DOIs	https://doi.org/10.1063/1.2207843
State	Published - May 29 2006

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.2207843

Library availability

Discover UIUC Full Text

Cite this

@article{140ebd8c8c4a4e9fa22947d5b0f699cd,

title = "Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with f T>500 GHz",

abstract = "The high frequency performance of type-II InPGaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15 mAμ m2. The peak fT of a graded base device with 0.38×8 μ m2 emitter dimensions improves from 505 GHz at 25 °C to 535 GHz at -55 °C as determined by -20 dBdecade extrapolation. The base grading has reduced the total transit time by 25\% compared to the uniform base type-II DHBT.",

author = "William Snodgrass and Wu, \{Bing Ruey\} and Walid Hafez and Cheng, \{K. Y.\} and Milton Feng",

note = "This work is supported by DARPA through the University Photonics Research Center for Hyper-Uniform Nano-photonics Technology (HUNT Center) program for type-II Sb-based material growth. This work is also supported by DARPA through the SWIFT program for high frequency device fabrication. One of the authors (W.S.) is grateful to University of Illinois Diffenbaugh Fellowship. Another author (B.W.) is grateful for the support of Semiconductor Research Corporation Fellowship. Another author (W.H.) is grateful for the support of Intel Fellowship and Stillman Fellowship. Another author (M.F.) is grateful for the support of the Nick Holonyak, Jr. Chair Professorship.",

year = "2006",

month = may,

day = "29",

doi = "10.1063/1.2207843",

language = "English (US)",

volume = "88",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "22",

}

TY - JOUR

T1 - Performance enhancement of composition-graded-base type-II InP/GaAsSb double-heterojunction bipolar transistors with f T>500 GHz

AU - Snodgrass, William

AU - Wu, Bing Ruey

AU - Hafez, Walid

AU - Cheng, K. Y.

AU - Feng, Milton

N1 - This work is supported by DARPA through the University Photonics Research Center for Hyper-Uniform Nano-photonics Technology (HUNT Center) program for type-II Sb-based material growth. This work is also supported by DARPA through the SWIFT program for high frequency device fabrication. One of the authors (W.S.) is grateful to University of Illinois Diffenbaugh Fellowship. Another author (B.W.) is grateful for the support of Semiconductor Research Corporation Fellowship. Another author (W.H.) is grateful for the support of Intel Fellowship and Stillman Fellowship. Another author (M.F.) is grateful for the support of the Nick Holonyak, Jr. Chair Professorship.

PY - 2006/5/29

Y1 - 2006/5/29

N2 - The high frequency performance of type-II InPGaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15 mAμ m2. The peak fT of a graded base device with 0.38×8 μ m2 emitter dimensions improves from 505 GHz at 25 °C to 535 GHz at -55 °C as determined by -20 dBdecade extrapolation. The base grading has reduced the total transit time by 25% compared to the uniform base type-II DHBT.

AB - The high frequency performance of type-II InPGaAsSb double heterojunction bipolar transistors (DHBTs) with compositionally graded and uniform 25 nm base layers and 65 nm InP collectors is investigated. The graded base DHBT achieves a peak current gain of 20.5 compared to 14.9 for the uniform base DHBT at current densities near 15 mAμ m2. The peak fT of a graded base device with 0.38×8 μ m2 emitter dimensions improves from 505 GHz at 25 °C to 535 GHz at -55 °C as determined by -20 dBdecade extrapolation. The base grading has reduced the total transit time by 25% compared to the uniform base type-II DHBT.

UR - https://www.scopus.com/pages/publications/33744810058

UR - https://www.scopus.com/pages/publications/33744810058#tab=citedBy

U2 - 10.1063/1.2207843

DO - 10.1063/1.2207843

M3 - Article

AN - SCOPUS:33744810058

SN - 0003-6951

VL - 88

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 22

M1 - 222101

ER -