Performance characteristics of scaled bilayer graphene pseudospin devices

Research output: Contribution to journalArticlepeer-review

Abstract

In this paper, we examine the performance characteristics of bilayer graphene pseudospin devices as we scale the layer width of the monolayers of graphene which comprise the bilayer structure. We find that, for layer widths of 30 nm, the device performance can exceed analytical predictions due to thermal smoothing of the interlayer interactions. However, when the device is further scaled to 20 nm and below, we find an appreciable drop of the maximum current the device can sustain when compared with the predicted values which result from increased quantum interference between injected quasi-particles and those reflected off of the excitonic gap opened at the Fermi energy. These results provide important insight into the maximum achievable performance characteristics and optimal device-design parameters for this promising potential post-CMOS logic device.

Original languageEnglish (US)
Article number5567138
Pages (from-to)3059-3067
Number of pages9
JournalIEEE Transactions on Electron Devices
Volume57
Issue number11
DOIs
StatePublished - Nov 2010

Keywords

  • Beyond complementary metaloxidesemiconductor (CMOS)
  • bilayer
  • graphene
  • nanoelectronics
  • tunneling

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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