Performance and photovoltaic response of polymer-doped carbon nanotube p-n diodes

Daner Abdula, Moonsub Shim

Research output: Contribution to journalArticlepeer-review


Two terminal abrupt junction diodes are fabricated from single semiconducting carbon nanotubes with simple photopatterned polymer layers defining air-stable p- and n-regions. These intratube diodes show nearly ideal behavior with relatively low series resistance and no sign of Zener breakdown at room temperature. Spatial doping profiles measured by micro-Raman spectroscopy and selective electrochemical gating of the n-region indicate that diode performance depends strongly on relative doping levels. A short circuit current of 1.4 nA with an open circuit voltage of 205 mV are measured when illuminated to saturation.

Original languageEnglish (US)
Pages (from-to)2154-2159
Number of pages6
JournalACS Nano
Issue number10
StatePublished - Oct 1 2008


  • Carbon nanotube
  • Diode
  • p-n
  • Photovoltaic
  • Raman spectroscopy

ASJC Scopus subject areas

  • Engineering(all)
  • Materials Science(all)
  • Physics and Astronomy(all)

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