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Performance and optical gain characteristic of InGaN MQW laser diodes
Michael Kneissl
, Chris G. Van De Walle
, David P. Bour
, Linda T. Romano
,
Lynford L. Goddard
, Cyrus P. Master
, John E. Northrup
, Noble M. Johnson
Research output
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peer-review
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Keyphrases
Composition Fluctuations
100%
Performance Gain
100%
Indium Gallium Nitride (InGaN)
100%
Quantum Dot Lasers
100%
Optical Gain
100%
Gain Characteristics
100%
Quantum-well Laser Diode
100%
Banded Structure
33%
Room Temperature
33%
Diode Laser
33%
Indium Content
33%
Effective Mass
33%
Spontaneous Emission
33%
Quantum Well Structure
33%
Phase Separation
33%
Current Density
33%
Continuous-wave Laser
33%
Cavity Length
33%
Multiple Quantum Wells
33%
Threshold Current Density
33%
Inhomogeneous Broadening
33%
InGaN Quantum Wells
33%
Emission Measurement
33%
Gain Spectrum
33%
Ridge Waveguide Laser
33%
In Content
33%
Pseudomorphic
33%
Threshold Current
33%
InxGa1-xN
33%
Operating Voltage
33%
Continuous-wave Operation
33%
InGaN Alloys
33%
Distributed Loss
33%
Laser Emission Spectrum
33%
Gain Calculation
33%
Engineering
Quantum Well
100%
Optical Gain
100%
Continuous Wave
50%
Experimental Observation
25%
Band Structure
25%
Room Temperature
25%
Experimental Result
25%
Indium Content
25%
Spontaneous Emission
25%
Broadening
25%
Phase Separation
25%
Cavity Length
25%
Waveguide
25%
Emission Spectra
25%
Operating Voltage
25%
Emission Measurement
25%
Gain Spectrum
25%
Current Threshold
25%
Laser Emission
25%
Threshold Current Density
25%
Logarithmic Gain
25%
Current Relationship
25%
Physics
Semiconductor Laser
100%
Quantum Well Lasers
100%
Quantum Wells
66%
Room Temperature
33%
Continuous Radiation
33%
Spontaneous Emission
33%
Emission Spectra
33%
Indium
33%
Continuous Wave Laser
33%
Waveguide Lasers
33%