@article{539007e94fdd4452a8e6e7e736f07327,
title = "Patterned oxide semiconductor by electrohydrodynamic jet printing for transparent thin film transistors",
abstract = "This paper explores transport in transparent thin film transistors formed using a liquid precursor to indium zinc oxide, delivered to target substrates by electrohydrodynamic jet (e-jet) printing. Under optimized conditions, we observe field effect mobilities as high as 32 cm 2V -1s -1, with on/off current ratios of 10 3 and threshold voltages of 2 V. These results provide evidence that material manipulated in fine-jet, electric field induced liquid flows can yield semiconductor devices without any adverse effects of residual charge or unintentional doping. E-jet printing methods provide levels of resolution (∼1.5 m) that provide a path to printed transistors with small critical dimensions.",
author = "Sangkyu Lee and Jeonghyun Kim and Junghyun Choi and Hyunjung Park and Jaehwan Ha and Yongkwan Kim and Rogers, {John A.} and Ungyu Paik",
note = "Funding Information: This work was financially supported by National Research Foundation of Korea (NRF) through a grant (K2070400000307A050000310, Global Research Laboratory (GRL) Program) provided by the Korean Ministry of Education, Science & Technology (MEST) and WCU (World Class University) program through the National Research Foundation of Korea funded by the Ministry of Education, Science and Technology (R31-10092) in 2012. S.L., J.K., J.A.R., and U.P. designed the experiments and wrote the paper. S.L., J.H., and Y.K. contributed to the printer setup and nozzle preparation. S.L., J.K., J.C., and H.P. carried out the ink preparation, printing, and characterization. S.L., J.K., and J.C. designed device fabrication. U.P. and J.A.R. contributed to project planning.",
year = "2012",
month = mar,
day = "5",
doi = "10.1063/1.3691177",
language = "English (US)",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics",
number = "10",
}