Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

A. Vailionis; B. Cho; G. Glass; P. Desjardins; David G. Cahill; J. E. Greene

doi:10.1103/PhysRevLett.85.3672

Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

A. Vailionis
, B. Cho
, G. Glass
, P. Desjardins
, David G. Cahill
, J. E. Greene

Research output: Contribution to journal › Article › peer-review

Abstract

Scanning tunneling microscopy (STM) was used to determine the initial stages in the two-dimensional (2D) to three-dimensional (3D) morphological transition for Ge layers grown on Si(001) at 650°C. It was found that the prepyramid islands serve as precursors for the formation of the larger {105}-faceted, 〈100〉 square-based pyramids. These islands exhibited round bases.

Original language	English (US)
Pages (from-to)	3672-3675
Number of pages	4
Journal	Physical review letters
Volume	85
Issue number	17
DOIs	https://doi.org/10.1103/PhysRevLett.85.3672
State	Published - Oct 23 2000

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General Physics and Astronomy

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10.1103/PhysRevLett.85.3672

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abstract = "Scanning tunneling microscopy (STM) was used to determine the initial stages in the two-dimensional (2D) to three-dimensional (3D) morphological transition for Ge layers grown on Si(001) at 650°C. It was found that the prepyramid islands serve as precursors for the formation of the larger \{105\}-faceted, 〈100〉 square-based pyramids. These islands exhibited round bases.",

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AU - Vailionis, A.

AU - Cho, B.

AU - Glass, G.

AU - Desjardins, P.

AU - Cahill, David G.

AU - Greene, J. E.

PY - 2000/10/23

Y1 - 2000/10/23

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AB - Scanning tunneling microscopy (STM) was used to determine the initial stages in the two-dimensional (2D) to three-dimensional (3D) morphological transition for Ge layers grown on Si(001) at 650°C. It was found that the prepyramid islands serve as precursors for the formation of the larger {105}-faceted, 〈100〉 square-based pyramids. These islands exhibited round bases.

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ER -

Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

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