Pathway for the strain-driven two-dimensional to three-dimensional transition during growth of Ge on Si(001)

A. Vailionis, B. Cho, G. Glass, P. Desjardins, David G. Cahill, J. E. Greene

Research output: Contribution to journalArticle

Abstract

Scanning tunneling microscopy (STM) was used to determine the initial stages in the two-dimensional (2D) to three-dimensional (3D) morphological transition for Ge layers grown on Si(001) at 650°C. It was found that the prepyramid islands serve as precursors for the formation of the larger {105}-faceted, 〈100〉 square-based pyramids. These islands exhibited round bases.

Original languageEnglish (US)
Pages (from-to)3672-3675
Number of pages4
JournalPhysical review letters
Volume85
Issue number17
DOIs
StatePublished - Oct 23 2000

ASJC Scopus subject areas

  • Physics and Astronomy(all)

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