Room temperature continuous wave operation of red (⋋o~ 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 x 64 arrays have a pitch of 100 μmwith device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGalnP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages ≤2.7 V. The differential quantum efficiencies exceed 10%.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering