Partial top dielectric stack distributed bragg reflectors for red vertical cavity surface emitting laser arrays

J. A. Lott; R. P. Schneider; K. J. Malloy; S. P. Kilcoyne; K. D. Choquette

doi:10.1109/68.392232

Partial top dielectric stack distributed bragg reflectors for red vertical cavity surface emitting laser arrays

J. A. Lott, R. P. Schneider, K. J. Malloy, S. P. Kilcoyne, K. D. Choquette

Research output: Contribution to journal › Article › peer-review

Abstract

Room temperature continuous wave operation of red (⋋_o~ 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 x 64 arrays have a pitch of 100 μmwith device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGalnP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages ≤2.7 V. The differential quantum efficiencies exceed 10%.

Original language	English (US)
Pages (from-to)	1397-1399
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	6
Issue number	12
DOIs	https://doi.org/10.1109/68.392232
State	Published - Dec 1994
Externally published	Yes

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Online availability

10.1109/68.392232

Library availability

Discover UIUC Full Text

Cite this

@article{5af6c5b619644e52818d33fd0c896df8,

title = "Partial top dielectric stack distributed bragg reflectors for red vertical cavity surface emitting laser arrays",

abstract = "Room temperature continuous wave operation of red (⋋o~ 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 x 64 arrays have a pitch of 100 μmwith device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGalnP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages ≤2.7 V. The differential quantum efficiencies exceed 10%.",

author = "Lott, {J. A.} and Schneider, {R. P.} and Malloy, {K. J.} and Kilcoyne, {S. P.} and Choquette, {K. D.}",

note = "Funding Information: Manuscript received August 2, 1994. This work was supported by the US Department of Energy under Contract Number DE-AC04-94AL85000, and in part by the USAF Rome Laboratory, Griffiss AFB, NY 13441. J. A. Lott is with the Air Force Institute of Technology, Department of Electrical and Computer Engineering, Wright-Patterson AFR, OH 45433 USA. R. P. Schneider, Jr., S. P. Kilcoyne, and K. D. Choquette are with Sandia National Laboratories, Microelectronics and Photonics Center, Albuquerque, NM 87185 USA. K. J. Malloy is with The University of New Mexico, Ccnter for High Technology Materials, Albuquerque, NM 87 13 1 USA. IEEE Log Number 9406198.",

year = "1994",

month = dec,

doi = "10.1109/68.392232",

language = "English (US)",

volume = "6",

pages = "1397--1399",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

TY - JOUR

T1 - Partial top dielectric stack distributed bragg reflectors for red vertical cavity surface emitting laser arrays

AU - Lott, J. A.

AU - Schneider, R. P.

AU - Malloy, K. J.

AU - Kilcoyne, S. P.

AU - Choquette, K. D.

N1 - Funding Information: Manuscript received August 2, 1994. This work was supported by the US Department of Energy under Contract Number DE-AC04-94AL85000, and in part by the USAF Rome Laboratory, Griffiss AFB, NY 13441. J. A. Lott is with the Air Force Institute of Technology, Department of Electrical and Computer Engineering, Wright-Patterson AFR, OH 45433 USA. R. P. Schneider, Jr., S. P. Kilcoyne, and K. D. Choquette are with Sandia National Laboratories, Microelectronics and Photonics Center, Albuquerque, NM 87185 USA. K. J. Malloy is with The University of New Mexico, Ccnter for High Technology Materials, Albuquerque, NM 87 13 1 USA. IEEE Log Number 9406198.

PY - 1994/12

Y1 - 1994/12

N2 - Room temperature continuous wave operation of red (⋋o~ 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 x 64 arrays have a pitch of 100 μmwith device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGalnP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages ≤2.7 V. The differential quantum efficiencies exceed 10%.

AB - Room temperature continuous wave operation of red (⋋o~ 660 nm) vertical cavity surface emitting laser arrays is reported. The 1 x 64 arrays have a pitch of 100 μmwith device diameters of 15 μm. Grown by metalorganic vapor phase epitaxy, the devices consist of an AlGalnP strained quantum well optical cavity active region surrounded by AlGaAs distributed Bragg reflectors (DBR's). The top coupling DBR includes a partial dielectric stack, deposited after implanted device fabrication. All 64 devices operate simultaneously with peak output powers >0.45 mW, threshold currents <1.5 mA, and threshold voltages ≤2.7 V. The differential quantum efficiencies exceed 10%.

UR - http://www.scopus.com/inward/record.url?scp=0028731625&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0028731625&partnerID=8YFLogxK

U2 - 10.1109/68.392232

DO - 10.1109/68.392232

M3 - Article

AN - SCOPUS:0028731625

SN - 1041-1135

VL - 6

SP - 1397

EP - 1399

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

IS - 12

ER -

Partial top dielectric stack distributed bragg reflectors for red vertical cavity surface emitting laser arrays

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this