Partial dislocations at domain intersections in a tetragonal ferroelectric crystal

X. Tan, J. K. Shang

Research output: Contribution to journalArticlepeer-review

Abstract

Domain behaviour under electric cycling was examined by transmission electron microscopy in a 〈001〉-oriented 0.65Pb(Mg1/3Nb 2/3)O3-0.35PbTiO3 ferroelectric crystal. Prior to electric cycling, the crystal contained two nonparallel sets of 90° domain walls along the two {110} planes. For the most part, the domain walls remained planar, dividing the crystal into highly regular domain strips. As two nonparallel domain walls approached each other, the domain width tapered down to avoid full contact. Upon repeated electric cycling, the domains were forced into full contact, resulting in direct intersections of 90° domain walls and charged wall segments along the domain intersection. At the domain intersection, partial dislocations were observed along with a stacking fault on a {1̄01) plane. These dislocations had a Burgers vector of 1/2[101] and were of predominantly screw type. It is suggested that the partial dislocations resulted from a shear displacement along [101] in the crystal as the domain switched its polarization to form the intersection.

Original languageEnglish (US)
Pages (from-to)1455-1466
Number of pages12
JournalJournal of Physics Condensed Matter
Volume16
Issue number8
DOIs
StatePublished - Mar 3 2004

ASJC Scopus subject areas

  • Materials Science(all)
  • Condensed Matter Physics

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