Parametric effects on thin film growth and uniformity in an atmospheric pressure impinging jet CVD reactor

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A systematic parametric study has been performed to study the effects of various geometrical parameters on the growth rate and growth rate uniformity in a jet impingement chemical vapor deposition reactor operated at atmospheric pressure. A previously validated two-dimensional axisymmetric computational model is used to numerically solve the equations governing variable density flow, and energy and species transport. Buoyancy-induced secondary flows, which are greatly enhanced at elevated pressure, are found to strongly compromise the deposit uniformity for conditions that typically lead to uniform films at lower pressures. However, for appropriate choices of inlet flow rate, substrate rotation rate, and reactor dimensionless lengths, these detrimental effects can be effectively suppressed, leading to highly uniform deposits at atmospheric pressure. In addition, the observed growth rate and efficiency of precursor utilization are significantly improved over low-pressure reactors. These results suggest that uniformity may not necessarily have to be sacrificed in cost-effective, atmospheric pressure reactors.

Original languageEnglish (US)
Pages (from-to)22-34
Number of pages13
JournalJournal of Crystal Growth
Issue number1-2
StatePublished - Jun 15 2004


  • A1. Convection
  • A1. Fluid flows
  • A1. Heat transfer
  • A1. Mass transfer
  • A3. Metalorganic chemical vapor deposition

ASJC Scopus subject areas

  • Condensed Matter Physics
  • Inorganic Chemistry
  • Materials Chemistry


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