Parallelism maps for optically contacted etalons

Timothy L Killeen, P. B. Hays, J. De Vos

Research output: Contribution to journalArticle

Abstract

A measurement technique is described that is capable of producing accurate numerical maps of the parallelism defect of optically contacted Fabry-Perot etalons. A photoelectric raster scan of the etalon transmission intensity distribution is performed at each of three closely spaced etalon tunings, one at maximum on-axis and two at the half-maxima on-axis positions. Simple data manipulation gives numerical or contour maps of the parallelism defect. Results demonstrating the effect of mechanical constraints on etalon parallelism are presented.

Original languageEnglish (US)
Pages (from-to)2616-2619
Number of pages4
JournalApplied Optics
Volume20
Issue number15
DOIs
StatePublished - Aug 1981
Externally publishedYes

ASJC Scopus subject areas

  • Atomic and Molecular Physics, and Optics

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  • Cite this

    Killeen, T. L., Hays, P. B., & De Vos, J. (1981). Parallelism maps for optically contacted etalons. Applied Optics, 20(15), 2616-2619. https://doi.org/10.1364/AO.20.002616