p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

D. K. Sengupta; S. L. Jackson; D. Ahmari; H. C. Kuo; J. I. Malin; S. Thomas; M. Feng; G. E. Stillman; Y. C. Chang; L. Li; H. C. Liu

doi:10.1063/1.117963

p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

D. K. Sengupta, S. L. Jackson, D. Ahmari, H. C. Kuo, J. I. Malin, S. Thomas, M. Feng, G. E. Stillman, Y. C. Chang, L. Li, H. C. Liu

Electrical and Computer Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.

Original language	English (US)
Pages (from-to)	3209-3211
Number of pages	3
Journal	Applied Physics Letters
Volume	69
Issue number	21
DOIs	https://doi.org/10.1063/1.117963
State	Published - Nov 18 1996

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Physics and Astronomy (miscellaneous)

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10.1063/1.117963

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title = "p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm",

abstract = "Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.",

author = "Sengupta, {D. K.} and Jackson, {S. L.} and D. Ahmari and Kuo, {H. C.} and Malin, {J. I.} and S. Thomas and M. Feng and Stillman, {G. E.} and Chang, {Y. C.} and L. Li and Liu, {H. C.}",

year = "1996",

month = nov,

day = "18",

doi = "10.1063/1.117963",

language = "English (US)",

volume = "69",

pages = "3209--3211",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

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TY - JOUR

T1 - p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

AU - Sengupta, D. K.

AU - Jackson, S. L.

AU - Ahmari, D.

AU - Kuo, H. C.

AU - Malin, J. I.

AU - Thomas, S.

AU - Feng, M.

AU - Stillman, G. E.

AU - Chang, Y. C.

AU - Li, L.

AU - Liu, H. C.

PY - 1996/11/18

Y1 - 1996/11/18

N2 - Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.

AB - Lattice-matched InGaAs/InP quantum well intersubband photodetectors (QWIPs) have been grown on an InP substrate by gas source molecular beam epitaxy. Detection at 4.55 μm was observed for a narrow well p-type InGaAs QWIP which, when complimented by a high responsivity 8.93 μm n-type InGaAs/InP QWIP, demonstrates the possibility of dual band, monolithically integrated QWIPs on the same InP substrate. Theoretical calculations of the photocurrent spectra are in excellent agreement with the experimental data.

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U2 - 10.1063/1.117963

DO - 10.1063/1.117963

M3 - Article

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VL - 69

SP - 3209

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JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 21

ER -

p-type InGaAs/InP quantum well infrared photodetector with peak response at 4.55 μm

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