P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, Ilesanmi Adesida

Research output: Contribution to conferencePaperpeer-review

Abstract

A comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures is discussed. Results on dark currents, DC, and RF responses are presented.

Original languageEnglish (US)
Pages173-174
Number of pages2
StatePublished - Jan 1 2000
Event58th Device Research Conference (58th DRC) - Denver, CO, USA
Duration: Jun 19 2000Jun 21 2000

Other

Other58th Device Research Conference (58th DRC)
CityDenver, CO, USA
Period6/19/006/21/00

ASJC Scopus subject areas

  • Engineering(all)

Fingerprint Dive into the research topics of 'P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications'. Together they form a unique fingerprint.

Cite this