P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications

J. H. Jang; G. Cueva; D. C. Dumka; W. E. Hoke; P. J. Lemonias; Ilesanmi Adesida

P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications

J. H. Jang, G. Cueva, D. C. Dumka, W. E. Hoke, P. J. Lemonias, Ilesanmi Adesida

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Abstract

A comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures is discussed. Results on dark currents, DC, and RF responses are presented.

Original language	English (US)
Pages	173-174
Number of pages	2
State	Published - 2000
Event	58th Device Research Conference (58th DRC) - Denver, CO, USA Duration: Jun 19 2000 → Jun 21 2000

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Other	58th Device Research Conference (58th DRC)
City	Denver, CO, USA
Period	6/19/00 → 6/21/00

ASJC Scopus subject areas

Engineering(all)

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@conference{41df8c90b039427f80114b3f9dc91571,

title = "P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications",

abstract = "A comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures is discussed. Results on dark currents, DC, and RF responses are presented.",

author = "Jang, {J. H.} and G. Cueva and Dumka, {D. C.} and Hoke, {W. E.} and Lemonias, {P. J.} and Ilesanmi Adesida",

year = "2000",

language = "English (US)",

pages = "173--174",

note = "58th Device Research Conference (58th DRC) ; Conference date: 19-06-2000 Through 21-06-2000",

}

TY - CONF

T1 - P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications

AU - Jang, J. H.

AU - Cueva, G.

AU - Dumka, D. C.

AU - Hoke, W. E.

AU - Lemonias, P. J.

AU - Adesida, Ilesanmi

PY - 2000

Y1 - 2000

N2 - A comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures is discussed. Results on dark currents, DC, and RF responses are presented.

AB - A comparative study of p-i-n photodiodes fabricated using metamorphic (MM-PIN) GaAs-based and lattice-matched (LM-PIN) InP-based heterostructures is discussed. Results on dark currents, DC, and RF responses are presented.

UR - http://www.scopus.com/inward/record.url?scp=0033658621&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0033658621&partnerID=8YFLogxK

M3 - Paper

AN - SCOPUS:0033658621

SP - 173

EP - 174

T2 - 58th Device Research Conference (58th DRC)

Y2 - 19 June 2000 through 21 June 2000

ER -

P-I-N photodiodes in metamorphic InAlAs/InGaAs/GaAs for long wavelength applications

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