@article{7c0f36358998444b92a4bbc673978d30,
title = "Oxygen effect on the performance of β-Ga2O3 enhancement mode MOSFETs heteroepitaxially grown on a sapphire",
abstract = "β-Ga2O3 is regarded as a promising candidate for next-generation high-power devices; however, the impact of material quality on device performance is significant and not yet well understood. In this study, β-Ga2O3 heteroepilayers were grown on c-plane sapphire using metalorganic chemical vapor deposition (MOCVD) at three different O2 flow rates. Enhancement-mode β-Ga2O3 metal-oxide-semiconductor field-effect transistors (MOSFETs) were then fabricated with a gate-recessed process, incorporating a 5 µm gate field plate structure. Higher O2 flow rates resulted in increased breakdown voltage. X-ray photoelectron spectroscopy analysis suggests that this improvement is due to reduced oxygen vacancies and minimized Al diffusion from the substrate. First-principle simulations further confirmed this phenomenon.",
keywords = "Al diffusion, Enhancement-mode MOSFETs, Gate field plate, MOCVD, Oxygen vacancies, ꞵ-GaO",
author = "Chuang, {Yueh Han} and Tarntair, {Fu Gow} and Wang, {Tzu Wei} and Singh, {Anoop Kumar} and Liu, {Po Liang} and Wuu, {Dong Sing} and Kuo, {Hao Chung} and Xiuling Li and Horng, {Ray Hua}",
note = "This work was supported by 2024 MOE UI-UAAT Cooperation Project and the National Science and Technology Council (Taiwan, R.O.C.) under Grant Nos. 113-2221-E-A49-052-MY3, 112-2622-E-A49-011, 112-2221-E-A49-069-MY3, 113-2622-8-A49-012-SB, 110-2222-E-009-006-MY3, 111-2923-E-A49-003-MY3, and 112-2622-8-A49-013-SB. The authors also wish to express their sincere gratitude for the financial support by the Higher Education Sprout Project of the National Yang Ming Chiao Tung University and Ministry of Education (MOE), Taiwan. We also acknowledge Globe Wafer Co., Ltd, Wafer Work Corporation, Powerchip Semiconductor Manufacturing Corporation, Industrial Technology Research Institute and MAtek Corporation and Industrial Technology Research Institute for funding and material measurement support. This work was supported by the National Science and Technology Council (Taiwan, R.O.C.) under Grant Nos. 113-2221-E-A49-052-MY3, 112-2622-E-A49-011, 112-2221-E-A49-069-MY3, 113- 2622-8-A49-012-SB, 110-2222-E-009-006-MY3, 111-2923-E-A49-003-MY3, and 112-2622-8-A49-013-SB.",
year = "2025",
month = mar,
doi = "10.1016/j.apsadv.2025.100711",
language = "English (US)",
volume = "26",
journal = "Applied Surface Science Advances",
issn = "2666-5239",
publisher = "Elsevier B.V.",
}