Abstract
Fabrication of a bilayer HfO2/single-crystal LiNbO3 film is demonstrated using deep high-energy He+ implantation in a LiNbO3 wafer, followed by HfO2 atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO3 crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO3 film, are also demonstrated.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 269-273 |
| Number of pages | 5 |
| Journal | Thin Solid Films |
| Volume | 518 |
| Issue number | 1 |
| DOIs | |
| State | Published - Nov 2 2009 |
| Externally published | Yes |
Keywords
- Atomic layer growth
- Ion-implantation selective etching
- Lift off
- Thin-film LiNbO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry