Abstract
Fabrication of a bilayer HfO2/single-crystal LiNbO3 film is demonstrated using deep high-energy He+ implantation in a LiNbO3 wafer, followed by HfO2 atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO3 crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO3 film, are also demonstrated.
Original language | English (US) |
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Pages (from-to) | 269-273 |
Number of pages | 5 |
Journal | Thin Solid Films |
Volume | 518 |
Issue number | 1 |
DOIs | |
State | Published - Nov 2 2009 |
Externally published | Yes |
Keywords
- Atomic layer growth
- Ion-implantation selective etching
- Lift off
- Thin-film LiNbO
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry