Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates

Tsung Liang Chen; Angela Kou; Avishai Ofan; Ophir Gaathon; R. M. Osgood; Oleg Gang; Lakshmanan Vanamurthy; Sasha Bakhru; Hassaram Bakhru

doi:10.1016/j.tsf.2009.06.004

Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates

Tsung Liang Chen, Angela Kou, Avishai Ofan, Ophir Gaathon, R. M. Osgood, Oleg Gang, Lakshmanan Vanamurthy, Sasha Bakhru, Hassaram Bakhru

Research output: Contribution to journal › Article › peer-review

Abstract

Fabrication of a bilayer HfO₂/single-crystal LiNbO₃ film is demonstrated using deep high-energy He⁺ implantation in a LiNbO₃ wafer, followed by HfO₂ atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO₃ crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO₃ film, are also demonstrated.

Original language	English (US)
Pages (from-to)	269-273
Number of pages	5
Journal	Thin Solid Films
Volume	518
Issue number	1
DOIs	https://doi.org/10.1016/j.tsf.2009.06.004
State	Published - Nov 2 2009
Externally published	Yes

Keywords

Atomic layer growth
Ion-implantation selective etching
Lift off
Thin-film LiNbO

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Online availability

10.1016/j.tsf.2009.06.004

Library availability

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@article{06df95c71b9e49c6a512dfe1ca8034f9,

title = "Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates",

abstract = "Fabrication of a bilayer HfO2/single-crystal LiNbO3 film is demonstrated using deep high-energy He+ implantation in a LiNbO3 wafer, followed by HfO2 atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO3 crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO3 film, are also demonstrated.",

keywords = "Atomic layer growth, Ion-implantation selective etching, Lift off, Thin-film LiNbO",

author = "Chen, {Tsung Liang} and Angela Kou and Avishai Ofan and Ophir Gaathon and Osgood, {R. M.} and Oleg Gang and Lakshmanan Vanamurthy and Sasha Bakhru and Hassaram Bakhru",

note = "Funding Information: Our experiments were supported by NSF and carried out, in part, at the Center for Functional Nanomaterials and National Synchrotron Light Source, Brookhaven National Laboratory, DOE Contract #DE-AC02-98CH10886, using the shared experimental facilities of the NSF MRSEC, DMR-0213574, and the NY Office of Science, Technology and Academic Research. The authors thank Prof. Cevdet Noyan for assistance on our XRD measurements.",

year = "2009",

month = nov,

day = "2",

doi = "10.1016/j.tsf.2009.06.004",

language = "English (US)",

volume = "518",

pages = "269--273",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

number = "1",

}

TY - JOUR

T1 - Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates

AU - Chen, Tsung Liang

AU - Kou, Angela

AU - Ofan, Avishai

AU - Gaathon, Ophir

AU - Osgood, R. M.

AU - Gang, Oleg

AU - Vanamurthy, Lakshmanan

AU - Bakhru, Sasha

AU - Bakhru, Hassaram

N1 - Funding Information: Our experiments were supported by NSF and carried out, in part, at the Center for Functional Nanomaterials and National Synchrotron Light Source, Brookhaven National Laboratory, DOE Contract #DE-AC02-98CH10886, using the shared experimental facilities of the NSF MRSEC, DMR-0213574, and the NY Office of Science, Technology and Academic Research. The authors thank Prof. Cevdet Noyan for assistance on our XRD measurements.

PY - 2009/11/2

Y1 - 2009/11/2

N2 - Fabrication of a bilayer HfO2/single-crystal LiNbO3 film is demonstrated using deep high-energy He+ implantation in a LiNbO3 wafer, followed by HfO2 atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO3 crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO3 film, are also demonstrated.

AB - Fabrication of a bilayer HfO2/single-crystal LiNbO3 film is demonstrated using deep high-energy He+ implantation in a LiNbO3 wafer, followed by HfO2 atomic layer deposition, and, then, selective etching exfoliation from the bulk LiNbO3 crystal. The properties and morphology of these exfoliated bilayer films are characterized using a set of thin-film probes. Pre-exfoliation film patterning and one model application, in surface-refractive-index tuning of guided waves in a free-standing LiNbO3 film, are also demonstrated.

KW - Atomic layer growth

KW - Ion-implantation selective etching

KW - Lift off

KW - Thin-film LiNbO

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U2 - 10.1016/j.tsf.2009.06.004

DO - 10.1016/j.tsf.2009.06.004

M3 - Article

AN - SCOPUS:69549129513

SN - 0040-6090

VL - 518

SP - 269

EP - 273

JO - Thin Solid Films

JF - Thin Solid Films

IS - 1

ER -

Oxide heterogrowth on ion-exfoliated thin-film complex oxide substrates

Abstract

Keywords

ASJC Scopus subject areas

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