Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates

Y. Xiong, Y. Zhou, Z. H. Zhu, Y. H. Lo, C. Ji, S. A. Bashar, A. A. Allerman, T. Hargett, R. Sieg, K. D. Choquette

Research output: Contribution to journalArticlepeer-review

Abstract

Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.

Original languageEnglish (US)
Pages (from-to)110-112
Number of pages3
JournalIEEE Photonics Technology Letters
Volume12
Issue number2
DOIs
StatePublished - Feb 2000
Externally publishedYes

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

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