@article{d5af6bb580cf4ea9af2c0f29a71bcd50,
title = "Oxide-defined GaAs vertical-cavity surface-emitting lasers on Si substrates",
abstract = "Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.",
author = "Y. Xiong and Y. Zhou and Zhu, {Z. H.} and Lo, {Y. H.} and C. Ji and Bashar, {S. A.} and Allerman, {A. A.} and T. Hargett and R. Sieg and Choquette, {K. D.}",
note = "Funding Information: Manuscript received August 27, 1999; revised October 15, 1999. This work was supported bythe Defense Advanced Research Projects Agency under HOTC and the National Science Foundation. Y. Xiong, Y. Zhou, Z. H. Zhu, and Y.-H. Lo are with Cornell University, Ithaca, NY 14853 USA. C. Ji and S. A. Bashar are with Nova Crystals, Inc., Ithaca, NY 14850 USA. A. A. Allerman, T. Hargett, R. Sieg, and K. D. Choquette are with Sandia National Laboratories, Alburquerque, NM 87185 USA. Publisher Item Identifier S 1041-1135(00)01095-8.",
year = "2000",
month = feb,
doi = "10.1109/68.823486",
language = "English (US)",
volume = "12",
pages = "110--112",
journal = "IEEE Photonics Technology Letters",
issn = "1041-1135",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "2",
}