Oxide-defined 850-nm vertical cavity surface emitting lasers (VCSEL) on Si substrates were fabricated employing a novel low-temperature wafer bonding technique. Devices exhibit a differential quantum efficiency as high as 53% and a light output power of 7.1 mW at room temperature without a heat sink, illustrating low thermal resistance of the bonding interface.
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering