Abstract
Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520GHz operating at current densities over 1400kA/cm2 have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 653-658 |
| Number of pages | 6 |
| Journal | Conference Proceedings - International Conference on Indium Phosphide and Related Materials |
| State | Published - 2004 |
| Event | 2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan Duration: May 31 2004 → Jun 4 2004 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering