Over 500 GHz InP Heterojunction Bipolar Transistors

Milton Feng, Walid Hafez, Jie Wei Lai

Research output: Contribution to journalConference article

Abstract

Single heterojunction bipolar transistors (SHBTs) with cutoff frequencies as high as 520GHz operating at current densities over 1400kA/cm2 have been demonstrated. We compare state-of-the-art HBT technologies, focusing on the aspects of scalability and speed, breakdown voltage, thermal properties, and the demands future applications will require from these high-performance devices.

Original languageEnglish (US)
Pages (from-to)653-658
Number of pages6
JournalConference Proceedings - International Conference on Indium Phosphide and Related Materials
StatePublished - Dec 1 2004
Event2004 International Conference on Indium Phosphide and Related Materials, 16th IPRM - Kagoshima, Japan
Duration: May 31 2004Jun 4 2004

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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