Origins of structural hole traps in hydrogenated amorphous silicon

Eric Johlin, Lucas K. Wagner, Tonio Buonassisi, Jeffrey C. Grossman

Research output: Contribution to journalArticlepeer-review


The inherently disordered nature of hydrogenated amorphous silicon (a-Si:H) obscures the influence of atomic features on the trapping of holes. To address this, we have created a set of over two thousand ab initio structures of a-Si:H and explored the influence of geometric factors on the occurrence of deep hole traps using density-functional theory. Statistical analysis of the relative contribution of various structures to the trap distribution shows that floating bonds and ionization-induced displacements correlate most strongly with hole traps in our ensemble.

Original languageEnglish (US)
Article number146805
JournalPhysical review letters
Issue number14
StatePublished - Apr 5 2013

ASJC Scopus subject areas

  • General Physics and Astronomy


Dive into the research topics of 'Origins of structural hole traps in hydrogenated amorphous silicon'. Together they form a unique fingerprint.

Cite this