Abstract
The charge-density-wave (CDW) dielectric relaxation frequency, which has been found to decrease at low temperatures according to an Arrhenius behavior in (TaSe4)2I and K0.3MoO3, is identified with the ac-dc decoupling frequency previously seen in TaS3 and NbSe3. A simple model is proposed based upon normal carrier screening of the CDW polarization created near randomly distributed "strong-pinning" centers within the bulk crystal. Relaxation frequencies calculated in terms of this model agree precisely with experiment. A wide range of phenomena associated with the nature of the threshold field, coherent current oscillations, and high-frequency ac response appear to have natural explanations within this context.
Original language | English (US) |
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Pages (from-to) | 9038-9041 |
Number of pages | 4 |
Journal | Physical Review B |
Volume | 34 |
Issue number | 12 |
DOIs | |
State | Published - 1986 |
ASJC Scopus subject areas
- Condensed Matter Physics