Origin of the dielectric relaxation frequency in sliding-charge-density- wave systems

J. R. Tucker, W. G. Lyons, J. H. Miller, R. E. Thorne, Joseph W Lyding

Research output: Contribution to journalArticle

Abstract

The charge-density-wave (CDW) dielectric relaxation frequency, which has been found to decrease at low temperatures according to an Arrhenius behavior in (TaSe4)2I and K0.3MoO3, is identified with the ac-dc decoupling frequency previously seen in TaS3 and NbSe3. A simple model is proposed based upon normal carrier screening of the CDW polarization created near randomly distributed "strong-pinning" centers within the bulk crystal. Relaxation frequencies calculated in terms of this model agree precisely with experiment. A wide range of phenomena associated with the nature of the threshold field, coherent current oscillations, and high-frequency ac response appear to have natural explanations within this context.

Original languageEnglish (US)
Pages (from-to)9038-9041
Number of pages4
JournalPhysical Review B
Volume34
Issue number12
DOIs
StatePublished - Jan 1 1986

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Charge density waves
Dielectric relaxation
sliding
Frequency response
polarization (waves)
Screening
Polarization
decoupling
frequency response
Crystals
screening
oscillations
thresholds
Experiments
Temperature
crystals

ASJC Scopus subject areas

  • Condensed Matter Physics

Cite this

Origin of the dielectric relaxation frequency in sliding-charge-density- wave systems. / Tucker, J. R.; Lyons, W. G.; Miller, J. H.; Thorne, R. E.; Lyding, Joseph W.

In: Physical Review B, Vol. 34, No. 12, 01.01.1986, p. 9038-9041.

Research output: Contribution to journalArticle

Tucker, J. R. ; Lyons, W. G. ; Miller, J. H. ; Thorne, R. E. ; Lyding, Joseph W. / Origin of the dielectric relaxation frequency in sliding-charge-density- wave systems. In: Physical Review B. 1986 ; Vol. 34, No. 12. pp. 9038-9041.
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