Origin of EUV mask blank defects from ion beam deposition

H. Yu, Daniel Andruczyk, David N Ruzic, V. Jindal, P. Kearney, Y. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution


In EUV lithography mask production, one source of contaminants originates from the targets used to sputter material onto the substrates. In particular, silicon appears to produce more contamination on rough regions of the silicon target. The features were found to be triangular hillocks pointing in the direction of the incident beam. The aim of this research is to prevent this particle formation on the target and thus eventually on the substrate. Both Si and Ru targets were sputtered using different ion beam conditions to understand particle formation mechanisms on the target and explore the ion beam conditions that can mitigate particles. Additionally, SRIM was used to calculate sputtering yields to better understand the mechanisms behind particle formation.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
StatePublished - 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
ISSN (Print)0277-786X


OtherExtreme Ultraviolet (EUV) Lithography III
Country/TerritoryUnited States
CitySan Jose, CA


  • EUV Lithography
  • Masks
  • SRIM
  • Triangular hillocks

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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