Origin of EUV mask blank defects from ion beam deposition

H. Yu, Daniel Andruczyk, David N Ruzic, V. Jindal, P. Kearney, Y. Jiang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

In EUV lithography mask production, one source of contaminants originates from the targets used to sputter material onto the substrates. In particular, silicon appears to produce more contamination on rough regions of the silicon target. The features were found to be triangular hillocks pointing in the direction of the incident beam. The aim of this research is to prevent this particle formation on the target and thus eventually on the substrate. Both Si and Ru targets were sputtered using different ion beam conditions to understand particle formation mechanisms on the target and explore the ion beam conditions that can mitigate particles. Additionally, SRIM was used to calculate sputtering yields to better understand the mechanisms behind particle formation.

Original languageEnglish (US)
Title of host publicationExtreme Ultraviolet (EUV) Lithography III
DOIs
StatePublished - May 31 2012
EventExtreme Ultraviolet (EUV) Lithography III - San Jose, CA, United States
Duration: Feb 13 2012Feb 16 2012

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8322
ISSN (Print)0277-786X

Other

OtherExtreme Ultraviolet (EUV) Lithography III
CountryUnited States
CitySan Jose, CA
Period2/13/122/16/12

    Fingerprint

Keywords

  • EUV Lithography
  • Masks
  • SRIM
  • Triangular hillocks

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Yu, H., Andruczyk, D., Ruzic, D. N., Jindal, V., Kearney, P., & Jiang, Y. (2012). Origin of EUV mask blank defects from ion beam deposition. In Extreme Ultraviolet (EUV) Lithography III [83221T] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8322). https://doi.org/10.1117/12.916481