Optimized Strained Si / Strained Ge Dual-Channel Heterostructures for High Mobility p- and N-MOSFETs

Minjoo L. Lee, Eugene A. Fitzgerald

Research output: Contribution to journalConference articlepeer-review

Abstract

Strained Si / Strained Ge double heterostructures grown on relaxed Si 1-xGex can be used to fabricate extremely high mobility P-MOSFETs. We present the first mobility results to date on N-MOSFETs fabricated on these heterostructures. By optimizing the layer thicknesses and strain, we have demonstrated hole and electron mobility enhancements of 10 and 1.8 times, respectively. Our work also shows that the electron mobility in these heterostructures cannot be increased by allowing electrons to populate the buried Ge.

Original languageEnglish (US)
Pages (from-to)429-432
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
StatePublished - 2003
Externally publishedYes
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: Dec 8 2003Dec 10 2003

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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