Abstract
Strained Si / Strained Ge double heterostructures grown on relaxed Si 1-xGex can be used to fabricate extremely high mobility P-MOSFETs. We present the first mobility results to date on N-MOSFETs fabricated on these heterostructures. By optimizing the layer thicknesses and strain, we have demonstrated hole and electron mobility enhancements of 10 and 1.8 times, respectively. Our work also shows that the electron mobility in these heterostructures cannot be increased by allowing electrons to populate the buried Ge.
| Original language | English (US) |
|---|---|
| Pages (from-to) | 429-432 |
| Number of pages | 4 |
| Journal | Technical Digest - International Electron Devices Meeting |
| State | Published - 2003 |
| Externally published | Yes |
| Event | IEEE International Electron Devices Meeting - Washington, DC, United States Duration: Dec 8 2003 → Dec 10 2003 |
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry