Optimization of selective oxidation for 850 nm (IR) and 780 nm (far-red) energy/data efficient oxide-confined microcavity VCSELs

Michael Liu, Mong Kai Wu, Milton Feng

Research output: Contribution to conferencePaper

Abstract

We compare the threshold current distribution of the VCSELs from two lots, 850 nm and 780 nm VCSELs, to examine the uniformity of the oxide aperture dimensions of the devices on the wafers. For the lot, the 850 nm VCSEL, with poor control in the oxidation process, the VCSELs show an average threshold current of 0.83 mA and a standard deviation of 0.089 mA. On the other hand, the other set of devices, the 780 nm VCSELs, which were fabricated with well-controlled oxidation show an average threshold current of 0.7 mA with a standard deviation of 0.032 mA. For microcavity VCSELs, the inability to achieve uniform oxidation will lead to device characteristics and performance inconsistency as well as low yield.

Original languageEnglish (US)
Pages79-82
Number of pages4
StatePublished - Jan 1 2014
Event2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014 - Denver, CO, United States
Duration: May 19 2014May 22 2014

Other

Other2014 International Conference on Compound Semiconductor Manufacturing Technology, CS MANTECH 2014
CountryUnited States
CityDenver, CO
Period5/19/145/22/14

Keywords

  • Oxidation
  • Oxide aperture
  • Vertical cavity surface-emitting laser (VCSEL)

ASJC Scopus subject areas

  • Electrical and Electronic Engineering

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