Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology

Shudong Huang; Srivatsan Parthasarathy; Yuanzhong Paul Zhou; Jean Jacques Hajjar; Elyse Rosenbaum

doi:10.1109/IRPS48203.2023.10118266

Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology

Shudong Huang, Srivatsan Parthasarathy, Yuanzhong Paul Zhou, Jean Jacques Hajjar, Elyse Rosenbaum

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This work presents a low-leakage silicon-controlled-rectifier (SCR) for ESD protection in a 45-nm PDSOI CMOS technology. The newly proposed trigger circuit utilizes a gate-coupled NMOS to provide a low trigger voltage, making the SCR suitable for gate oxide protection. Reverse body bias is used to achieve a low DC leakage current. The anode-cathode spacing of the SCR is optimized to provide a low overshoot voltage while avoiding punchthrough. the optimized SCR shows up to 50% improvement in voltage overshoot during very fast transients on the CDM timescale.

Original language	English (US)
Title of host publication	2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings
Publisher	Institute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)	9781665456722
DOIs	https://doi.org/10.1109/IRPS48203.2023.10118266
State	Published - 2023
Externally published	Yes
Event	61st IEEE International Reliability Physics Symposium, IRPS 2023 - Monterey, United States Duration: Mar 26 2023 → Mar 30 2023

Publication series

Name	IEEE International Reliability Physics Symposium Proceedings
Volume	2023-March
ISSN (Print)	1541-7026

Conference

Conference	61st IEEE International Reliability Physics Symposium, IRPS 2023
Country/Territory	United States
City	Monterey
Period	3/26/23 → 3/30/23

Keywords

CMOS
SCR
SOI
electrostatic discharge

ASJC Scopus subject areas

General Engineering

Online availability

10.1109/IRPS48203.2023.10118266

Library availability

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Cite this

Huang, S., Parthasarathy, S., Zhou, Y. P., Hajjar, J. J., & Rosenbaum, E. (2023). Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. In 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings (IEEE International Reliability Physics Symposium Proceedings; Vol. 2023-March). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/IRPS48203.2023.10118266

Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. / Huang, Shudong; Parthasarathy, Srivatsan; Zhou, Yuanzhong Paul et al.
2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE International Reliability Physics Symposium Proceedings; Vol. 2023-March).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Huang, S, Parthasarathy, S, Zhou, YP, Hajjar, JJ & Rosenbaum, E 2023, Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. in 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. IEEE International Reliability Physics Symposium Proceedings, vol. 2023-March, Institute of Electrical and Electronics Engineers Inc., 61st IEEE International Reliability Physics Symposium, IRPS 2023, Monterey, United States, 3/26/23. https://doi.org/10.1109/IRPS48203.2023.10118266

Huang S, Parthasarathy S, Zhou YP, Hajjar JJ, Rosenbaum E. Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. In 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc. 2023. (IEEE International Reliability Physics Symposium Proceedings). doi: 10.1109/IRPS48203.2023.10118266

Huang, Shudong ; Parthasarathy, Srivatsan ; Zhou, Yuanzhong Paul et al. / Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology. 2023 IEEE International Reliability Physics Symposium, IRPS 2023 - Proceedings. Institute of Electrical and Electronics Engineers Inc., 2023. (IEEE International Reliability Physics Symposium Proceedings).

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title = "Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology",

abstract = "This work presents a low-leakage silicon-controlled-rectifier (SCR) for ESD protection in a 45-nm PDSOI CMOS technology. The newly proposed trigger circuit utilizes a gate-coupled NMOS to provide a low trigger voltage, making the SCR suitable for gate oxide protection. Reverse body bias is used to achieve a low DC leakage current. The anode-cathode spacing of the SCR is optimized to provide a low overshoot voltage while avoiding punchthrough. the optimized SCR shows up to 50% improvement in voltage overshoot during very fast transients on the CDM timescale.",

keywords = "CMOS, SCR, SOI, electrostatic discharge",

author = "Shudong Huang and Srivatsan Parthasarathy and Zhou, {Yuanzhong Paul} and Hajjar, {Jean Jacques} and Elyse Rosenbaum",

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AU - Rosenbaum, Elyse

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AB - This work presents a low-leakage silicon-controlled-rectifier (SCR) for ESD protection in a 45-nm PDSOI CMOS technology. The newly proposed trigger circuit utilizes a gate-coupled NMOS to provide a low trigger voltage, making the SCR suitable for gate oxide protection. Reverse body bias is used to achieve a low DC leakage current. The anode-cathode spacing of the SCR is optimized to provide a low overshoot voltage while avoiding punchthrough. the optimized SCR shows up to 50% improvement in voltage overshoot during very fast transients on the CDM timescale.

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KW - electrostatic discharge

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Optimization of SCR for High-Speed Digital and RF Applications in 45-nm SOI CMOS Technology

Abstract

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Keywords

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