This paper presents an investigation of the effects of implantation energy and dose on the noise figure and associated gain of low noise GaAs metal-semiconductor field effect transistors. Our results show that the noise figure and associated gain in these devices decrease as the implantation energy and the implanted dose increase. rf and dc performance of devices fabricated by direct ion implantation into liquid encapsulated Czochralski substrates, metalorganic chemical vapor deposited buffer layers, and AsCl3 buffer layers have been evaluated. The equivalent circuit elements derived from the S parameters are used to interpret the variation of critical device properties as a function of implantation energy, dose, and gate recess depth.
ASJC Scopus subject areas
- Physics and Astronomy(all)