Optimal control of transient enhanced diffusion

R. Gunawan, M. Y.L. Jung, E. G. Seebauer, R. D. Braatz

Research output: Contribution to journalConference articlepeer-review


Transient enhanced diffusion of boron inhibits the formation of ultrashallow junctions needed in the next-generation of microelectronic devices. Reducing the junction depth using rapid thermal annealing with high heating rates comes at a cost of increasing sheet resistance. The focus of this study is to design the optimal annealing temperature program that gives the minimum junction depth while maintaining satisfactory sheet resistance. Comparison of different parameterizations of the optimal trajectories shows that linear profiles gave the best combination of minimizing junction depth and sheet resistance. Worst-case robustness analysis of the optimal control trajectory motivates improvements in feedback control implementations for these processes.

Original languageEnglish (US)
Pages (from-to)547-552
Number of pages6
JournalIFAC Proceedings Volumes (IFAC-PapersOnline)
Issue number1
StatePublished - 2004
Event7th International Symposium on Advanced Control of Chemical Processes, ADCHEM 2003 - , Hong Kong
Duration: Jan 11 2004Jan 14 2004


  • Model-based control
  • Optimal control
  • Semiconductors

ASJC Scopus subject areas

  • Control and Systems Engineering


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