Optical second harmonic study of Sb adsorption on Ge(111)

K. A. Schultz; I. I. Suni; C. E. Allen; E. G. Seebauer

doi:10.1016/0039-6028(92)90693-Z

Optical second harmonic study of Sb adsorption on Ge(111)

K. A. Schultz, I. I. Suni, C. E. Allen, E. G. Seebauer

Chemical and Biomolecular Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

The adsorption of Sb on Ge(111) has been examined by optical second harmonic generation (SHG) in combination with low-energy electron diffraction, Auger spectroscopy, and temperature programmed desorption (TPD). Adsorption at room temperature yields a layer that must be annealed to at least 675 K in order to relax the adsorbate to an equilibrium configuration. This relaxed layer forms an ideally terminated (1 × 1) structure with a saturation coverage θ_Sb of one monolayer. TPD indicates that Sb desorbs with an activation energy E_D = 65 kcal/mol, which is similar to the heat of vaporization of bulk Sb. SHG measurements show that the nonlinear susceptibility χ⁽²⁾_xxx changes sign at θ_Sb = 0.48. Such an effect has never been reported previously, and indicates that Sb induces substantial charge redistribution in the top layers of Ge.

Original language	English (US)
Pages (from-to)	40-49
Number of pages	10
Journal	Surface Science
Volume	276
Issue number	1-3
DOIs	https://doi.org/10.1016/0039-6028(92)90693-Z
State	Published - Oct 1 1992

ASJC Scopus subject areas

Condensed Matter Physics
Surfaces and Interfaces
Surfaces, Coatings and Films
Materials Chemistry

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10.1016/0039-6028(92)90693-Z

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title = "Optical second harmonic study of Sb adsorption on Ge(111)",

abstract = "The adsorption of Sb on Ge(111) has been examined by optical second harmonic generation (SHG) in combination with low-energy electron diffraction, Auger spectroscopy, and temperature programmed desorption (TPD). Adsorption at room temperature yields a layer that must be annealed to at least 675 K in order to relax the adsorbate to an equilibrium configuration. This relaxed layer forms an ideally terminated (1 × 1) structure with a saturation coverage θSb of one monolayer. TPD indicates that Sb desorbs with an activation energy ED = 65 kcal/mol, which is similar to the heat of vaporization of bulk Sb. SHG measurements show that the nonlinear susceptibility χ(2)xxx changes sign at θSb = 0.48. Such an effect has never been reported previously, and indicates that Sb induces substantial charge redistribution in the top layers of Ge.",

author = "Schultz, {K. A.} and Suni, {I. I.} and Allen, {C. E.} and Seebauer, {E. G.}",

note = "Funding Information: This work was supportedb y the National Science Foundation under equipment Grant No. Funding Information: CBT-8815964a nd Presidential Young Investigator Award No. CTS-8857037a, nd by the Department of Energy, Division of Materials Sciences, through the Materials Research Laboratory at the University of Illinois under contract No. DEFG02-91ER45439.",

year = "1992",

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doi = "10.1016/0039-6028(92)90693-Z",

language = "English (US)",

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T1 - Optical second harmonic study of Sb adsorption on Ge(111)

AU - Schultz, K. A.

AU - Suni, I. I.

AU - Allen, C. E.

AU - Seebauer, E. G.

N1 - Funding Information: This work was supportedb y the National Science Foundation under equipment Grant No. Funding Information: CBT-8815964a nd Presidential Young Investigator Award No. CTS-8857037a, nd by the Department of Energy, Division of Materials Sciences, through the Materials Research Laboratory at the University of Illinois under contract No. DEFG02-91ER45439.

PY - 1992/10/1

Y1 - 1992/10/1

N2 - The adsorption of Sb on Ge(111) has been examined by optical second harmonic generation (SHG) in combination with low-energy electron diffraction, Auger spectroscopy, and temperature programmed desorption (TPD). Adsorption at room temperature yields a layer that must be annealed to at least 675 K in order to relax the adsorbate to an equilibrium configuration. This relaxed layer forms an ideally terminated (1 × 1) structure with a saturation coverage θSb of one monolayer. TPD indicates that Sb desorbs with an activation energy ED = 65 kcal/mol, which is similar to the heat of vaporization of bulk Sb. SHG measurements show that the nonlinear susceptibility χ(2)xxx changes sign at θSb = 0.48. Such an effect has never been reported previously, and indicates that Sb induces substantial charge redistribution in the top layers of Ge.

AB - The adsorption of Sb on Ge(111) has been examined by optical second harmonic generation (SHG) in combination with low-energy electron diffraction, Auger spectroscopy, and temperature programmed desorption (TPD). Adsorption at room temperature yields a layer that must be annealed to at least 675 K in order to relax the adsorbate to an equilibrium configuration. This relaxed layer forms an ideally terminated (1 × 1) structure with a saturation coverage θSb of one monolayer. TPD indicates that Sb desorbs with an activation energy ED = 65 kcal/mol, which is similar to the heat of vaporization of bulk Sb. SHG measurements show that the nonlinear susceptibility χ(2)xxx changes sign at θSb = 0.48. Such an effect has never been reported previously, and indicates that Sb induces substantial charge redistribution in the top layers of Ge.

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DO - 10.1016/0039-6028(92)90693-Z

M3 - Article

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VL - 276

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EP - 49

JO - Surface Science

JF - Surface Science

IS - 1-3

ER -

Optical second harmonic study of Sb adsorption on Ge(111)

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