Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

Woon Kyung Choi; Doo Gun Kim; Yon Tae Moon; Young Wan Choi; Yong Kwan Kim; Kent D. Choquette; Seok Lee; Deok Ha Woo

doi:10.1063/1.2355362

Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

Woon Kyung Choi, Doo Gun Kim, Yon Tae Moon, Young Wan Choi, Yong Kwan Kim, Kent D. Choquette, Seok Lee, Deok Ha Woo

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Abstract

The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications.

Original language	English (US)
Article number	121117
Journal	Applied Physics Letters
Volume	89
Issue number	12
DOIs	https://doi.org/10.1063/1.2355362
State	Published - 2006

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Physics and Astronomy (miscellaneous)

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10.1063/1.2355362

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title = "Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure",

abstract = "The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications.",

author = "Choi, {Woon Kyung} and Kim, {Doo Gun} and Moon, {Yon Tae} and Choi, {Young Wan} and Kim, {Yong Kwan} and Choquette, {Kent D.} and Seok Lee and Woo, {Deok Ha}",

note = "Funding Information: This work was partially supported by “ERC OPERA (R11-2003-002)” and “Seoul R&BD program.”",

year = "2006",

doi = "10.1063/1.2355362",

language = "English (US)",

volume = "89",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "12",

}

TY - JOUR

T1 - Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

AU - Choi, Woon Kyung

AU - Kim, Doo Gun

AU - Moon, Yon Tae

AU - Choi, Young Wan

AU - Kim, Yong Kwan

AU - Choquette, Kent D.

AU - Lee, Seok

AU - Woo, Deok Ha

N1 - Funding Information: This work was partially supported by “ERC OPERA (R11-2003-002)” and “Seoul R&BD program.”

PY - 2006

Y1 - 2006

N2 - The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications.

AB - The authors show that the optical properties of selectively oxidized vertical cavity lasers with a depleted optical thyristor structure have a low threshold current and high sensitivity to input optical light. The oxidized thyristor laser clearly shows a nonlinear s-shaped current-voltage and lasing characteristics. A switching voltage of 5.24 V, a holding voltage of 1.50 V, and a very low threshold current of 0.65 mA are measured, making these devices attractive for optical processing applications.

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JO - Applied Physics Letters

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Optical properties of selectively oxidized vertical cavity laser with depleted optical thyristor structure

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