TY - JOUR
T1 - Optical properties of (GaSb) 3n(AlSb) n (1≤n≤5) superlattices
AU - Choi, S. G.
AU - Srivastava, S. K.
AU - Palmstrøm, C. J.
AU - Kim, Y. D.
AU - Cooper, S. L.
AU - Aspnes, D. E.
N1 - Funding Information:
The work at the University of Minnesota was supported in part by ONR N/N00014-99-1-0233, DARPA N/N00014-99-1-1005 and N/N00014-0830, and ARO DAAD-19-03-1-0360. The work at the University of Illinois was supported by SONY Corp. through account No. 1-627410-24400-191789. Y.D.K. was supported in part by National Research Laboratory through Compound Semiconductor Epitaxy Laboratory. The work at North Carolina State University was supported by ONR N00014-02-1-0080.
PY - 2005
Y1 - 2005
N2 - We report room-temperature pseudodielectric function spectra 〈ε (ω) 〉 = 〈 ε1 (ω) 〉 +i 〈 ε2 (ω) 〉 from 1.5 to 6.0 eV of a series of (GaSb)3n (AlSb)n (1≤n≤5) short-period superlattices (SLs) and the corresponding ternary alloy, Al0.3 Ga0.7 Sb, as determined by spectroscopic ellipsometry. An in situ chemical etching procedure was performed to minimize the effect of surface oxides and other overlayers. For small periods (n≤2), the dielectric responses of the SLs are similar to those of the random alloy. For larger n, structures due to the E1, E1 + Δ1, E0′, E2, and E1′ interband transitions can be seen, with the E1, E1 + Δ1, and E0′ structures showing a clear SL-period dependence. Two additional features were also observed near the E1 + Δ1 structure for n≥4.
AB - We report room-temperature pseudodielectric function spectra 〈ε (ω) 〉 = 〈 ε1 (ω) 〉 +i 〈 ε2 (ω) 〉 from 1.5 to 6.0 eV of a series of (GaSb)3n (AlSb)n (1≤n≤5) short-period superlattices (SLs) and the corresponding ternary alloy, Al0.3 Ga0.7 Sb, as determined by spectroscopic ellipsometry. An in situ chemical etching procedure was performed to minimize the effect of surface oxides and other overlayers. For small periods (n≤2), the dielectric responses of the SLs are similar to those of the random alloy. For larger n, structures due to the E1, E1 + Δ1, E0′, E2, and E1′ interband transitions can be seen, with the E1, E1 + Δ1, and E0′ structures showing a clear SL-period dependence. Two additional features were also observed near the E1 + Δ1 structure for n≥4.
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U2 - 10.1116/1.1881552
DO - 10.1116/1.1881552
M3 - Article
AN - SCOPUS:31144475614
SN - 1071-1023
VL - 23
SP - 1149
EP - 1153
JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
IS - 3
ER -