Optical gain of CdS quantum dots embedded in 3D photonic crystals

Yu A. Vlasov; K. Luterova; I. Pelant; B. Hönerlage; V. N. Astratov

doi:10.1016/S0040-6090(97)01146-2

Optical gain of CdS quantum dots embedded in 3D photonic crystals

Yu A. Vlasov, K. Luterova, I. Pelant, B. Hönerlage, V. N. Astratov

Research output: Contribution to journal › Article › peer-review

Abstract

Three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic lattice with a period of 200 nm, which exhibit a photonic gap around 600 nm. We report on the first observation of optical gain enhancement in semiconductor quantum dots embedded in a photonic crystal caused by modifications of light-matter interaction at the edges of the photonic gap.

Original language	English (US)
Pages (from-to)	93-95
Number of pages	3
Journal	Thin Solid Films
Volume	318
Issue number	1-2
DOIs	https://doi.org/10.1016/S0040-6090(97)01146-2
State	Published - Apr 15 1998
Externally published	Yes

Keywords

Lasing
Optical gain
Photonic band gap materials
Semiconductor quantum dots

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{cad0723b50d04d86b5e03f01266d8a5d,

title = "Optical gain of CdS quantum dots embedded in 3D photonic crystals",

abstract = "Three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic lattice with a period of 200 nm, which exhibit a photonic gap around 600 nm. We report on the first observation of optical gain enhancement in semiconductor quantum dots embedded in a photonic crystal caused by modifications of light-matter interaction at the edges of the photonic gap.",

keywords = "Lasing, Optical gain, Photonic band gap materials, Semiconductor quantum dots",

author = "Vlasov, {Yu A.} and K. Luterova and I. Pelant and B. H{\"o}nerlage and Astratov, {V. N.}",

note = "Funding Information: We are indebted to Drs. V.N. Bogomolov and A.V. Prokofiev for furnishing the samples of synthetic opals. We would like to thank M. Robino for providing AFM measurements and Drs. P. Gilliot, Ch. Hirlimann and R. Levy for many helpful discussions. Yu.V., K.L. and I.P. gratefully acknowledge the financial support from the French government, MENESR (CIES). V.A. acknowledges partial support from the RFBR (Grant No. 960217928).",

year = "1998",

month = apr,

day = "15",

doi = "10.1016/S0040-6090(97)01146-2",

language = "English (US)",

volume = "318",

pages = "93--95",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

number = "1-2",

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TY - JOUR

T1 - Optical gain of CdS quantum dots embedded in 3D photonic crystals

AU - Vlasov, Yu A.

AU - Luterova, K.

AU - Pelant, I.

AU - Hönerlage, B.

AU - Astratov, V. N.

N1 - Funding Information: We are indebted to Drs. V.N. Bogomolov and A.V. Prokofiev for furnishing the samples of synthetic opals. We would like to thank M. Robino for providing AFM measurements and Drs. P. Gilliot, Ch. Hirlimann and R. Levy for many helpful discussions. Yu.V., K.L. and I.P. gratefully acknowledge the financial support from the French government, MENESR (CIES). V.A. acknowledges partial support from the RFBR (Grant No. 960217928).

PY - 1998/4/15

Y1 - 1998/4/15

N2 - Three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic lattice with a period of 200 nm, which exhibit a photonic gap around 600 nm. We report on the first observation of optical gain enhancement in semiconductor quantum dots embedded in a photonic crystal caused by modifications of light-matter interaction at the edges of the photonic gap.

AB - Three-dimensional photonic crystals used in this study were synthetic opals, composed of submicron silica spheres, close-packed in a face-centered cubic lattice with a period of 200 nm, which exhibit a photonic gap around 600 nm. We report on the first observation of optical gain enhancement in semiconductor quantum dots embedded in a photonic crystal caused by modifications of light-matter interaction at the edges of the photonic gap.

KW - Lasing

KW - Optical gain

KW - Photonic band gap materials

KW - Semiconductor quantum dots

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U2 - 10.1016/S0040-6090(97)01146-2

DO - 10.1016/S0040-6090(97)01146-2

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EP - 95

JO - Thin Solid Films

JF - Thin Solid Films

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