Optical characterization of pure ZnSe films grown on GaAs

Young Dong Kim; S. L. Cooper; M. V. Klein; B. T. Jonker

doi:10.1063/1.109373

Optical characterization of pure ZnSe films grown on GaAs

Young Dong Kim, S. L. Cooper, M. V. Klein, B. T. Jonker

Research output: Contribution to journal › Article › peer-review

Abstract

We report the first spectroscopic ellipsometry study of the E₀, E₀+Δ₀, E₁, and E₁+Δ ₁ critical points in high-quality ZnSe films. These data seem to be the best identification of E₁ and E₁+Δ₁ peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH₄OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.

Original language	English (US)
Pages (from-to)	2387-2389
Number of pages	3
Journal	Applied Physics Letters
Volume	62
Issue number	19
DOIs	https://doi.org/10.1063/1.109373
State	Published - 1993

ASJC Scopus subject areas

Physics and Astronomy (miscellaneous)

Online availability

10.1063/1.109373

Library availability

Discover UIUC Full Text

Cite this

@article{326c95259b8c4355b66c898f1618856b,

title = "Optical characterization of pure ZnSe films grown on GaAs",

abstract = "We report the first spectroscopic ellipsometry study of the E0, E0+Δ0, E1, and E1+Δ 1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+Δ1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.",

author = "Kim, {Young Dong} and Cooper, {S. L.} and Klein, {M. V.} and Jonker, {B. T.}",

year = "1993",

doi = "10.1063/1.109373",

language = "English (US)",

volume = "62",

pages = "2387--2389",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics",

number = "19",

}

TY - JOUR

T1 - Optical characterization of pure ZnSe films grown on GaAs

AU - Kim, Young Dong

AU - Cooper, S. L.

AU - Klein, M. V.

AU - Jonker, B. T.

PY - 1993

Y1 - 1993

N2 - We report the first spectroscopic ellipsometry study of the E0, E0+Δ0, E1, and E1+Δ 1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+Δ1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.

AB - We report the first spectroscopic ellipsometry study of the E0, E0+Δ0, E1, and E1+Δ 1 critical points in high-quality ZnSe films. These data seem to be the best identification of E1 and E1+Δ1 peaks to date using ellipsometry. We also describe a chemical etching procedure which was successfully used to remove the natural surface oxide overlayer on the ZnSe films. X-ray photoelectron spectroscopy data after NH4OH treatment shows the disappearance of oxygen and oxidized Se peaks demonstrating the successful removal of surface oxide overlayer on ZnSe.

UR - http://www.scopus.com/inward/record.url?scp=36449000452&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=36449000452&partnerID=8YFLogxK

U2 - 10.1063/1.109373

DO - 10.1063/1.109373

M3 - Article

AN - SCOPUS:36449000452

SN - 0003-6951

VL - 62

SP - 2387

EP - 2389

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 19

ER -

Optical characterization of pure ZnSe films grown on GaAs

Abstract

ASJC Scopus subject areas

Online availability

Library availability

Related links

Fingerprint

Cite this