Optical characterization of nanopillar black silicon for plasmonic and solar cell application

M. R. Gartia, Y. Chen, Z. Xu, Y. C. Bordain, J. Eichorst, J. C. Mabon, J. A.N.T. De Soares, R. M. Clegg, Gang Logan Liu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

With the goal of improving photo-absorption of photovoltaic device and for plasmonic application we have fabricated nanopillar black silicon devices through etching-passivation technique which does not require any photomask and whole wafer scale uniformity is achieved at room temperature in a short time. We have carried out thorough optical characterization for nanopillar black silicon devices to be used for solar cell and plasmonic applications. Cathodoluminescence (CL), current dependent CL spectroscopy, photoluminescence (at room temperature and 77 K), Raman spectroscopy, reflectance and absorption measurement have been performed on the device. A thin layer of Ag is deposited to render with plasmonic property and the plasmonic effect is probed using surface plasmon enhanced fluorescence, angle dependent reflectance measurements, high resolution cathodoluminescence (CL), surface enhanced Raman spectroscopy (SERS) measurement and Fluorescence Lifetime Imaging Microscopy (FLIM) experiment. We obtained reduction in optical reflection of ∼ 12 times on b-Si substrate from UV to NIR range, the nanostructured fluorescence enhancement of ∼40 times and the Raman scattering enhancement factor of 6.4×107.

Original languageEnglish (US)
Title of host publicationPlasmonics
Subtitle of host publicationMetallic Nanostructures and Their Optical Properties IX
DOIs
StatePublished - Oct 19 2011
EventPlasmonics: Metallic Nanostructures and Their Optical Properties IX - San Diego, CA, United States
Duration: Aug 21 2011Aug 25 2011

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8096
ISSN (Print)0277-786X

Other

OtherPlasmonics: Metallic Nanostructures and Their Optical Properties IX
CountryUnited States
CitySan Diego, CA
Period8/21/118/25/11

Fingerprint

Cathodoluminescence
Plasmonics
Silicon
Solar Cells
Solar cells
solar cells
cathodoluminescence
Fluorescence
Raman spectroscopy
Raman Spectroscopy
silicon
cells
Reflectance
fluorescence
Photomasks
Absorption
Photoluminescence spectroscopy
Reflectometers
Enhancement
Fluorescence Lifetime

Keywords

  • Antireflection
  • Black silicon
  • Cathodoluminescence
  • SERS
  • Solar cell
  • Surface plasmon

ASJC Scopus subject areas

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Gartia, M. R., Chen, Y., Xu, Z., Bordain, Y. C., Eichorst, J., Mabon, J. C., ... Liu, G. L. (2011). Optical characterization of nanopillar black silicon for plasmonic and solar cell application. In Plasmonics: Metallic Nanostructures and Their Optical Properties IX [80962B] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8096). https://doi.org/10.1117/12.892851

Optical characterization of nanopillar black silicon for plasmonic and solar cell application. / Gartia, M. R.; Chen, Y.; Xu, Z.; Bordain, Y. C.; Eichorst, J.; Mabon, J. C.; De Soares, J. A.N.T.; Clegg, R. M.; Liu, Gang Logan.

Plasmonics: Metallic Nanostructures and Their Optical Properties IX. 2011. 80962B (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 8096).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Gartia, MR, Chen, Y, Xu, Z, Bordain, YC, Eichorst, J, Mabon, JC, De Soares, JANT, Clegg, RM & Liu, GL 2011, Optical characterization of nanopillar black silicon for plasmonic and solar cell application. in Plasmonics: Metallic Nanostructures and Their Optical Properties IX., 80962B, Proceedings of SPIE - The International Society for Optical Engineering, vol. 8096, Plasmonics: Metallic Nanostructures and Their Optical Properties IX, San Diego, CA, United States, 8/21/11. https://doi.org/10.1117/12.892851
Gartia MR, Chen Y, Xu Z, Bordain YC, Eichorst J, Mabon JC et al. Optical characterization of nanopillar black silicon for plasmonic and solar cell application. In Plasmonics: Metallic Nanostructures and Their Optical Properties IX. 2011. 80962B. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.892851
Gartia, M. R. ; Chen, Y. ; Xu, Z. ; Bordain, Y. C. ; Eichorst, J. ; Mabon, J. C. ; De Soares, J. A.N.T. ; Clegg, R. M. ; Liu, Gang Logan. / Optical characterization of nanopillar black silicon for plasmonic and solar cell application. Plasmonics: Metallic Nanostructures and Their Optical Properties IX. 2011. (Proceedings of SPIE - The International Society for Optical Engineering).
@inproceedings{990cf84be4ed4cf6a688d4154127cd33,
title = "Optical characterization of nanopillar black silicon for plasmonic and solar cell application",
abstract = "With the goal of improving photo-absorption of photovoltaic device and for plasmonic application we have fabricated nanopillar black silicon devices through etching-passivation technique which does not require any photomask and whole wafer scale uniformity is achieved at room temperature in a short time. We have carried out thorough optical characterization for nanopillar black silicon devices to be used for solar cell and plasmonic applications. Cathodoluminescence (CL), current dependent CL spectroscopy, photoluminescence (at room temperature and 77 K), Raman spectroscopy, reflectance and absorption measurement have been performed on the device. A thin layer of Ag is deposited to render with plasmonic property and the plasmonic effect is probed using surface plasmon enhanced fluorescence, angle dependent reflectance measurements, high resolution cathodoluminescence (CL), surface enhanced Raman spectroscopy (SERS) measurement and Fluorescence Lifetime Imaging Microscopy (FLIM) experiment. We obtained reduction in optical reflection of ∼ 12 times on b-Si substrate from UV to NIR range, the nanostructured fluorescence enhancement of ∼40 times and the Raman scattering enhancement factor of 6.4×107.",
keywords = "Antireflection, Black silicon, Cathodoluminescence, SERS, Solar cell, Surface plasmon",
author = "Gartia, {M. R.} and Y. Chen and Z. Xu and Bordain, {Y. C.} and J. Eichorst and Mabon, {J. C.} and {De Soares}, {J. A.N.T.} and Clegg, {R. M.} and Liu, {Gang Logan}",
year = "2011",
month = "10",
day = "19",
doi = "10.1117/12.892851",
language = "English (US)",
isbn = "9780819487063",
series = "Proceedings of SPIE - The International Society for Optical Engineering",
booktitle = "Plasmonics",

}

TY - GEN

T1 - Optical characterization of nanopillar black silicon for plasmonic and solar cell application

AU - Gartia, M. R.

AU - Chen, Y.

AU - Xu, Z.

AU - Bordain, Y. C.

AU - Eichorst, J.

AU - Mabon, J. C.

AU - De Soares, J. A.N.T.

AU - Clegg, R. M.

AU - Liu, Gang Logan

PY - 2011/10/19

Y1 - 2011/10/19

N2 - With the goal of improving photo-absorption of photovoltaic device and for plasmonic application we have fabricated nanopillar black silicon devices through etching-passivation technique which does not require any photomask and whole wafer scale uniformity is achieved at room temperature in a short time. We have carried out thorough optical characterization for nanopillar black silicon devices to be used for solar cell and plasmonic applications. Cathodoluminescence (CL), current dependent CL spectroscopy, photoluminescence (at room temperature and 77 K), Raman spectroscopy, reflectance and absorption measurement have been performed on the device. A thin layer of Ag is deposited to render with plasmonic property and the plasmonic effect is probed using surface plasmon enhanced fluorescence, angle dependent reflectance measurements, high resolution cathodoluminescence (CL), surface enhanced Raman spectroscopy (SERS) measurement and Fluorescence Lifetime Imaging Microscopy (FLIM) experiment. We obtained reduction in optical reflection of ∼ 12 times on b-Si substrate from UV to NIR range, the nanostructured fluorescence enhancement of ∼40 times and the Raman scattering enhancement factor of 6.4×107.

AB - With the goal of improving photo-absorption of photovoltaic device and for plasmonic application we have fabricated nanopillar black silicon devices through etching-passivation technique which does not require any photomask and whole wafer scale uniformity is achieved at room temperature in a short time. We have carried out thorough optical characterization for nanopillar black silicon devices to be used for solar cell and plasmonic applications. Cathodoluminescence (CL), current dependent CL spectroscopy, photoluminescence (at room temperature and 77 K), Raman spectroscopy, reflectance and absorption measurement have been performed on the device. A thin layer of Ag is deposited to render with plasmonic property and the plasmonic effect is probed using surface plasmon enhanced fluorescence, angle dependent reflectance measurements, high resolution cathodoluminescence (CL), surface enhanced Raman spectroscopy (SERS) measurement and Fluorescence Lifetime Imaging Microscopy (FLIM) experiment. We obtained reduction in optical reflection of ∼ 12 times on b-Si substrate from UV to NIR range, the nanostructured fluorescence enhancement of ∼40 times and the Raman scattering enhancement factor of 6.4×107.

KW - Antireflection

KW - Black silicon

KW - Cathodoluminescence

KW - SERS

KW - Solar cell

KW - Surface plasmon

UR - http://www.scopus.com/inward/record.url?scp=80054081660&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80054081660&partnerID=8YFLogxK

U2 - 10.1117/12.892851

DO - 10.1117/12.892851

M3 - Conference contribution

AN - SCOPUS:80054081660

SN - 9780819487063

T3 - Proceedings of SPIE - The International Society for Optical Engineering

BT - Plasmonics

ER -