TY - JOUR
T1 - Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal
AU - Then, H. W.
AU - Walter, G.
AU - Feng, M.
AU - Holonyak, N.
PY - 2008/11/3
Y1 - 2008/11/3
N2 - We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, Β (= ICO IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the "faster" QW collector (reduced Β) and differential gain, result in a higher 3 dB bandwidth (f3 dB =12π τ).
AB - We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, Β (= ICO IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the "faster" QW collector (reduced Β) and differential gain, result in a higher 3 dB bandwidth (f3 dB =12π τ).
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U2 - 10.1063/1.3000635
DO - 10.1063/1.3000635
M3 - Article
AN - SCOPUS:54949119119
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 163504
ER -