TY - JOUR
T1 - Optical bandwidth enhancement of heterojunction bipolar transistor laser operation with an auxiliary base signal
AU - Then, H. W.
AU - Walter, G.
AU - Feng, M.
AU - Holonyak, N.
N1 - Funding Information:
The authors are grateful for the support of DARPA Contract No. HR0011-04-1-0034 (Hyper-Uniform Nano-photonics Technologies, HUNT Center). N. Holonyak, Jr. is grateful for the support of the John Bardeen Chair (Sony) of Electrical and Computer Engineering and Physics, and M. Feng for the support of the Nick Holonyak, Jr. Chair of Electrical and Computer Engineering.
Copyright:
Copyright 2008 Elsevier B.V., All rights reserved.
PY - 2008
Y1 - 2008
N2 - We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, Β (= ICO IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the "faster" QW collector (reduced Β) and differential gain, result in a higher 3 dB bandwidth (f3 dB =12π τ).
AB - We report the improvement, from 10.5 to 22 GHz, in the optical modulation bandwidth of a quantum-well (QW) heterojunction bipolar transistor laser (TL) by the use of an ac auxiliary base signal. Because of the three-terminal form of the TL, an auxiliary signal can be used to peak the photon output, e.g., stimulated recombination which simultaneously reduces the operating current gain, Β (= ICO IBO), and increases the laser differential gain. A shorter effective base carrier lifetime, τ, owing to the increased QW recombination rate (stimulated recombination), enhanced carrier transport to the "faster" QW collector (reduced Β) and differential gain, result in a higher 3 dB bandwidth (f3 dB =12π τ).
UR - http://www.scopus.com/inward/record.url?scp=54949119119&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=54949119119&partnerID=8YFLogxK
U2 - 10.1063/1.3000635
DO - 10.1063/1.3000635
M3 - Article
AN - SCOPUS:54949119119
VL - 93
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 16
M1 - 163504
ER -