Optical bandwidth enhancement by operation and modulation of the first excited state of a transistor laser

H. W. Then, M. Feng, N. Holonyak

Research output: Contribution to journalArticlepeer-review

Abstract

A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980 nm) compared to ground state (1000 nm). The model shows that the bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no "pileup" of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC 0) resulting in a "tilted" emitter-to-collector population distribution.

Original languageEnglish (US)
Article number183505
JournalApplied Physics Letters
Volume91
Issue number18
DOIs
StatePublished - 2007

ASJC Scopus subject areas

  • Physics and Astronomy (miscellaneous)

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