Abstract
A model is developed to explain the large increase in the high-speed performance of the transistor laser (TL) operating on the first excited state (λ=980 nm) compared to ground state (1000 nm). The model shows that the bandwidth of the TL (absent resonance peaks) increases as much as twofold when it shifts operation from ground to first excited state. No assumption of upper subband state filling is necessary in the calculation consistent with no "pileup" of charge in the upper subbands because of the transistor boundary condition at the electrical collector of zero charge density (collector current IC 0) resulting in a "tilted" emitter-to-collector population distribution.
Original language | English (US) |
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Article number | 183505 |
Journal | Applied Physics Letters |
Volume | 91 |
Issue number | 18 |
DOIs | |
State | Published - 2007 |
ASJC Scopus subject areas
- Physics and Astronomy (miscellaneous)