Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

T. Suski; J. Jun; M. Leszczyński; H. Teisseyre; S. Strite; A. Rockett; A. Pelzmann; M. Kamp; K. J. Ebeling

doi:10.1063/1.368118

Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

T. Suski, J. Jun, M. Leszczyński, H. Teisseyre, S. Strite, A. Rockett, A. Pelzmann, M. Kamp, K. J. Ebeling

Materials Science and Engineering

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Abstract

Optical activation of Zn ions implanted to an epitaxial film of GaN was performed by means of sample annealing at N₂ overpressure up to 1.6 GPa. By applying pressure we avoided GaN decomposition and could increase the annealing temperature up to 1550 °C versus a limit of 1000-100 °C at ambient pressure. The Zn-acceptor-related photoluminescence (PL) intensity in implanted samples is maximized by annealing above 1350 °C after which the Zn PL intensity exceeds epitaxially doped GaN:Zn with comparable Zn concentration by factor 15. High-pressure annealing causes a significant diffusion of implanted Zn atoms in GaN films. It is also possible to diffuse Zn from the external source into the implanted/unimplanted layers. High dislocation densities strongly accelarate the Zn diffusion.

Original language	English (US)
Pages (from-to)	1155-1157
Number of pages	3
Journal	Journal of Applied Physics
Volume	84
Issue number	2
DOIs	https://doi.org/10.1063/1.368118
State	Published - Jul 15 1998

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General Physics and Astronomy

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abstract = "Optical activation of Zn ions implanted to an epitaxial film of GaN was performed by means of sample annealing at N2 overpressure up to 1.6 GPa. By applying pressure we avoided GaN decomposition and could increase the annealing temperature up to 1550 °C versus a limit of 1000-100 °C at ambient pressure. The Zn-acceptor-related photoluminescence (PL) intensity in implanted samples is maximized by annealing above 1350 °C after which the Zn PL intensity exceeds epitaxially doped GaN:Zn with comparable Zn concentration by factor 15. High-pressure annealing causes a significant diffusion of implanted Zn atoms in GaN films. It is also possible to diffuse Zn from the external source into the implanted/unimplanted layers. High dislocation densities strongly accelarate the Zn diffusion.",

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T1 - Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

AU - Suski, T.

AU - Jun, J.

AU - Leszczyński, M.

AU - Teisseyre, H.

AU - Strite, S.

AU - Rockett, A.

AU - Pelzmann, A.

AU - Kamp, M.

AU - Ebeling, K. J.

PY - 1998/7/15

Y1 - 1998/7/15

N2 - Optical activation of Zn ions implanted to an epitaxial film of GaN was performed by means of sample annealing at N2 overpressure up to 1.6 GPa. By applying pressure we avoided GaN decomposition and could increase the annealing temperature up to 1550 °C versus a limit of 1000-100 °C at ambient pressure. The Zn-acceptor-related photoluminescence (PL) intensity in implanted samples is maximized by annealing above 1350 °C after which the Zn PL intensity exceeds epitaxially doped GaN:Zn with comparable Zn concentration by factor 15. High-pressure annealing causes a significant diffusion of implanted Zn atoms in GaN films. It is also possible to diffuse Zn from the external source into the implanted/unimplanted layers. High dislocation densities strongly accelarate the Zn diffusion.

AB - Optical activation of Zn ions implanted to an epitaxial film of GaN was performed by means of sample annealing at N2 overpressure up to 1.6 GPa. By applying pressure we avoided GaN decomposition and could increase the annealing temperature up to 1550 °C versus a limit of 1000-100 °C at ambient pressure. The Zn-acceptor-related photoluminescence (PL) intensity in implanted samples is maximized by annealing above 1350 °C after which the Zn PL intensity exceeds epitaxially doped GaN:Zn with comparable Zn concentration by factor 15. High-pressure annealing causes a significant diffusion of implanted Zn atoms in GaN films. It is also possible to diffuse Zn from the external source into the implanted/unimplanted layers. High dislocation densities strongly accelarate the Zn diffusion.

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Optical activation and diffusivity of ion-implanted Zn acceptors in GaN under high-pressure, high-temperature annealing

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